Dithieno-naphthalimide based copolymers for air-stable field effect transistors: synthesis, characterization and device performance

2012 ◽  
Vol 22 (39) ◽  
pp. 21201 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Jishan Wu ◽  
Chunyan Chi
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Stable Field

scholarly journals Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

2017 ◽  
Vol 23 (5) ◽  
pp. 916-925
Author(s):  
Pritesh Parikh ◽  
Corey Senowitz ◽  
Don Lyons ◽  
Isabelle Martin ◽  
Ty J. Prosa ◽  
...  
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
Atom Probe ◽  
Physical Structure ◽  
Oxide Semiconductor ◽  
Device Performance

AbstractThe semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution. Compositional changes can affect device performance primarily through fluctuations in threshold voltage and channel current density. Traditional techniques such as scanning electron microscope and focused ion beam no longer provide the required resolution to probe the physical structure and chemical composition of individual fins. Hence advanced multimodal characterization approaches are required to better understand electronic devices. Herein, we report the study of 14 nm commercial finFETs using atom probe tomography (APT) and scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy (STEM-EDS). Complimentary compositional maps were obtained using both techniques with analysis of the gate dielectrics and silicon fin. APT additionally provided 3D information and allowed analysis of the distribution of low atomic number dopant elements (e.g., boron), which are elusive when using STEM-EDS.

Hydrogen-Bonded Semiconducting Pigments for Air-Stable Field-Effect Transistors

2012 ◽  
Vol 25 (11) ◽  
pp. 1563-1569 ◽  
Author(s):  
Eric Daniel Głowacki ◽  
Mihai Irimia-Vladu ◽  
Martin Kaltenbrunner ◽  
Jacek Gsiorowski ◽  
Matthew S. White ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Stable Field ◽  
Hydrogen Bonded

scholarly journals Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs

2017 ◽  
Vol 16 (1) ◽  
pp. 69-74
Author(s):  
Md Iktiham Bin Taher ◽  
Md. Tanvir Hasan
Keyword(s):  
Field Effect ◽  
Doping Concentration ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Gate Length ◽  
Drain Voltage ◽  
Switching Device ◽  
Device Applications

Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for switching device applications. The doping of n- and p-layers is varied to evaluate the figure of merits of proposed devices with a gate length of 10 nm. Devices are switched from OFF-state (gate voltage, VGS = 0 V) to ON-state (VGS = 1 V) for a fixed drain voltage, VDS = 0.75 V. The device with channel doping of 1×1016 cm-3 and source/drain (S/D) of 1×1020 cm-3 shows good device performance due to better control of gate over channel. The ON-current (ION), OFF-current (IOFF), subthreshold swing (SS), drain induce barrier lowering (DIBL), and delay time are found to be 6.85 mA/μm, 5.15×10-7 A/μm, 87.8 mV/decade, and 100.5 mV/V, 0.035 ps, respectively. These results indicate that GaN-based MOSFETs are very suitable for the logic switching application in nanoscale regime.

Recent developments in fabrication and performance of metal halide perovskite field-effect transistors

2020 ◽  
Vol 8 (47) ◽  
pp. 16691-16715
Author(s):  
Yu Liu ◽  
Ping-An Chen ◽  
Yuanyuan Hu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Halide ◽  
Device Performance ◽  
Metal Halide Perovskite ◽  
Recent Developments ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
And Performance

Recent developments in fabrication strategies and device performance of field-effect transistors based on metal halide perovskites are reviewed.

Toward air-stable field-effect transistors with a tin iodide-based hybrid perovskite semiconductor

2019 ◽  
Vol 125 (23) ◽  
pp. 235501 ◽  
Author(s):  
Toshinori Matsushima ◽  
Shinobu Terakawa ◽  
Matthew R. Leyden ◽  
Takashi Fujihara ◽  
Chuanjiang Qin ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Hybrid Perovskite ◽  
Tin Iodide ◽  
Stable Field

Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device

Nanoscale ◽  
2020 ◽  
Vol 12 (28) ◽  
pp. 15443-15452
Author(s):  
Ying Guo ◽  
Feng Pan ◽  
Gaoyang Zhao ◽  
Yajie Ren ◽  
Binbin Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Gate Length ◽  
Germanium Selenide ◽  
Technology Roadmap

ML GeSe field-effect transistors have an excellent device performance, even at the 1 nm gate-length. The on-state current of the devices can fulfill the requirements of the International Technology Roadmap for Semiconductors (2013 version).

Organic field-effect transistors integrated with Ti2CTx electrodes

Nanoscale ◽  
2018 ◽  
Vol 10 (11) ◽  
pp. 5191-5197 ◽  
Author(s):  
Shen Lai ◽  
Sung Kyu Jang ◽  
Jeong Ho Cho ◽  
Sungjoo Lee
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Device Performance ◽  
Organic Field Effect Transistors

Pentacene organic field-effect transistors integrated with MXene (Ti2CTx) electrodes are studied. Superior device performance with high mobility, high on/off ratio, and low contact resistance is achieved.

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