Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory

Small ◽  
2017 ◽  
Vol 14 (2) ◽  
pp. 1702525 ◽  
Author(s):  
Xue-Feng Wang ◽  
He Tian ◽  
Hai-Ming Zhao ◽  
Tian-Yu Zhang ◽  
Wei-Quan Mao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Voltage ◽  
Pd Nanoparticles ◽  
Hybrid Structure ◽  
Interface Engineering ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Xiang Yang
Keyword(s):  
Resistive Switching ◽  
Pulse Width ◽  
Low Voltage ◽  
Memory Device ◽  
Switching Voltage ◽  
Resistive Switching Memory ◽  
Fast Switching ◽  
Technology Nodes ◽  
Device Property ◽  
Switching Memory

Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nanometallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nanometallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

2013 ◽  
Vol 34 (10) ◽  
pp. 1265-1267 ◽  
Author(s):  
Shih-Chieh Wu ◽  
Hsien-Tsung Feng ◽  
Ming-Jiue Yu ◽  
I-Ting Wang ◽  
Tuo-Hung Hou
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Switching Memory
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