High-temperature charge transport and thermoelectric properties of a degenerately Al-doped ZnO nanocomposite

2012 ◽  
Vol 22 (29) ◽  
pp. 14633 ◽  
Author(s):  
Woo Hyun Nam ◽  
Young Soo Lim ◽  
Soon-Mok Choi ◽  
Won-Seon Seo ◽  
Jeong Yong Lee
Keyword(s):  
High Temperature ◽  
Charge Transport ◽  
Thermoelectric Properties ◽  
Doped Zno

Enhanced high-temperature thermoelectric properties of Ce- and Dy-doped ZnO for power generation

Energy ◽  
2013 ◽  
Vol 54 ◽  
pp. 139-145 ◽  
Author(s):  
K. Park ◽  
H.K. Hwang ◽  
J.W. Seo ◽  
W.-S. Seo
Keyword(s):  
Power Generation ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Doped Zno

Microstructure and Thermoelectric Properties of Al-Doped ZnO Sintered Body

2010 ◽  
Vol 638-642 ◽  
pp. 2172-2177
Author(s):  
Noburo Shikatani ◽  
Tatsuya Misawa ◽  
Yuji Kawakami ◽  
Michihiro Ohta
Keyword(s):  
Thermal Conductivity ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Raw Material ◽  
Sintered Body ◽  
Electric Resistance ◽  
Entire Region ◽  
Low Resistance ◽  
High Power Consumption ◽  
Doped Zno

ZnO is heat-resistant and inexpensive, and the raw material of which is abundant, it is considered to be a good candidate thermoelectric material. Usually, a low-resistance n-type ZnO sintered body is obtained by doping 0.5-5 mol% Al2O3 followed by burning at a high temperature of approximately 1673K. However, this high-temperature burning has drawbacks, such as high power consumption and an increase in thermal conductivity with grain growth. Under these circumstances, we attempted to address these disadvantages. When ZnO was burned with Al as a dopant in an electric furnace at a temperature as low as approximately 1473K, ZnO with relatively good thermoelectric properties was obtained. In addition, the Al-doped sample showed lower electric resistance (332 K: 6.85×10-4Ωcm) than the Al2O3-doped sample, as determined on the basis of the resistance temperature characteristics of these samples. The causes of this low resistance may be as follows: 1) the metal-Al-mediated sample was densified by burning at a low temperature of approximately 1473K and 2) the Al distribution to the entire region of the ZnO bulk, resulting in the spread of Al solid-solution regions in the ZnO. We also found that the thermal conductivity decreased (973 K: 3.66 Wm-1K-1) in the Al-doped sample.

High temperature thermoelectric properties of Nb-doped ZnO ceramics

2013 ◽  
Vol 74 (12) ◽  
pp. 1811-1815 ◽  
Author(s):  
N.N. Wang ◽  
H.X. Xin ◽  
D. Li ◽  
X.J. Li ◽  
J. Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
Doped Zno ◽  
Zno Ceramics

Multiple doped ZnO with enhanced thermoelectric properties

2021 ◽  
Vol 41 (7) ◽  
pp. 4182-4188
Author(s):  
BeiBei Zhu ◽  
Cong Chen ◽  
ZhiChao Yao ◽  
JiaYi Chen ◽  
Chuang Jia ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Doped Zno

High-temperature thermoelectric properties of polycrystalline Zn1−x−yAlxTiyO ceramics

2007 ◽  
Vol 27 (2-3) ◽  
pp. 813-817 ◽  
Author(s):  
K. Park ◽  
K.Y. Ko ◽  
W.-S. Seo ◽  
W.-S. Cho ◽  
J.-G. Kim ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties

scholarly journals Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 338
Author(s):  
Hak Hyeon Lee ◽  
Dong Su Kim ◽  
Ji Hoon Choi ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
...  
Keyword(s):  
Charge Transport ◽  
Atomic Layer ◽  
Absorption Efficiency ◽  
Open Circuit ◽  
Band Alignment ◽  
Conformal Coating ◽  
Layer Deposition ◽  
Layer Stacking ◽  
Doped Zno ◽  
P Type

An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min.

High-temperature thermoelectric properties of p-type skutterudites Ba0.15Yb x Co3FeSb12 and Yb y Co3FeSb9As3

2014 ◽  
Vol 50 (1) ◽  
pp. 34-39 ◽  
Author(s):  
Yongkwan Dong ◽  
Pooja Puneet ◽  
Terry M. Tritt ◽  
George S. Nolas
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document