Fabrication and optical properties of vertically aligned ZnSe nanowire arrays catalyzed by Ga and Ag

CrystEngComm ◽  
2011 ◽  
Vol 13 (19) ◽  
pp. 5751 ◽  
Author(s):  
Yao Liang ◽  
Yin Tao ◽  
S. K. Hark
Keyword(s):  
Optical Properties ◽  
Nanowire Arrays ◽  
Vertically Aligned

Composition-Tunable Vertically Aligned CdSxSe1-x Nanowire Arrays via van der Waals Epitaxy: Investigation of Optical Properties and Photocatalytic Behavior

2012 ◽  
Vol 24 (30) ◽  
pp. 4151-4156 ◽  
Author(s):  
Jun Pan ◽  
Muhammad Iqbal Bakti Utama ◽  
Qing Zhang ◽  
Xinfeng Liu ◽  
Bo Peng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Van Der Waals ◽  
Nanowire Arrays ◽  
Vertically Aligned

Structure and Optical Properties of ZnO Nanowire Arrays Grown by Plasma-assisted Molecular Beam Epitaxy

2012 ◽  
Vol 27 (3) ◽  
pp. 301-304 ◽  
Author(s):  
Zhi-Yuan ZHENG ◽  
Tie-Xin CHEN ◽  
Liang CAO ◽  
Yu-Yan HAN ◽  
Fa-Qiang XU
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

scholarly journals Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

Nanophotonics ◽  
2020 ◽  
Vol 9 (15) ◽  
pp. 4497-4503
Author(s):  
Liying Zhang ◽  
Xiangqian Xiu ◽  
Yuewen Li ◽  
Yuxia Zhu ◽  
Xuemei Hua ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Light Trapping ◽  
High Surface ◽  
Volume Ratio ◽  
Average Diameter ◽  
Nanowire Arrays ◽  
Etching Technique ◽  
Inductively Coupled ◽  
Solar Blind ◽  
Vertically Aligned

AbstractVertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.

scholarly journals Vertically Aligned CsPbBr3 Nanowire Arrays with Template-Induced Crystal Phase Transition and Stability

2021 ◽  
Vol 125 (8) ◽  
pp. 4860-4868
Author(s):  
Zhaojun Zhang ◽  
Klara Suchan ◽  
Jun Li ◽  
Crispin Hetherington ◽  
Alexander Kiligaridis ◽  
...  
Keyword(s):  
Phase Transition ◽  
Nanowire Arrays ◽  
Crystal Phase ◽  
Vertically Aligned ◽  
Crystal Phase Transition

Structure and Optical Properties of SnS Nanowire Arrays Prepared with Two-Step Method

2012 ◽  
Vol 476-478 ◽  
pp. 1519-1522 ◽  
Author(s):  
You Dao Lin ◽  
Xin Wen ◽  
Lai Sen Wang ◽  
Guang Hui Yue ◽  
Dong Liang Peng
Keyword(s):  
Optical Properties ◽  
Electrochemical Deposition ◽  
Average Diameter ◽  
Nanowire Arrays ◽  
Step Method ◽  
Single Crystalline ◽  
Uv Visible

Abstract. Single crystalline SnS nanowire arrays have been synthesized by sulfurating the Sn nanowire arrays which were prepared with the electrochemical deposition. The obtained SnS nanowire arrays are charactered with the XRD, SEM, TEM and the UV/Visible/NIR spectrophotometer. And the results indicate that the nanowires with an average diameter of 50 nm and a length of several tens micrometers, which same with the as prepared Sn nanowires. There are two absorption peaks indicate with the direct and indirect bandgaps about the orthorhombic SnS nanowire arrays.

The Growth Mechanism of Vertically Aligned ZnO Nanowire Arrays on Non-epitaxial Si(100) Substrates

2011 ◽  
Vol 58 (6) ◽  
pp. 817-821 ◽  
Author(s):  
Yu-Tung Yin ◽  
Yen-Zhi Chen ◽  
Ching-Hsiang Chen ◽  
Liang-Yih Chen
Keyword(s):  
Growth Mechanism ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned
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