Composition-Tunable Vertically Aligned CdSxSe1-x Nanowire Arrays via van der Waals Epitaxy: Investigation of Optical Properties and Photocatalytic Behavior

2012 ◽  
Vol 24 (30) ◽  
pp. 4151-4156 ◽  
Author(s):  
Jun Pan ◽  
Muhammad Iqbal Bakti Utama ◽  
Qing Zhang ◽  
Xinfeng Liu ◽  
Bo Peng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Van Der Waals ◽  
Nanowire Arrays ◽  
Vertically Aligned

Structure and Optical Properties of ZnO Nanowire Arrays Grown by Plasma-assisted Molecular Beam Epitaxy

2012 ◽  
Vol 27 (3) ◽  
pp. 301-304 ◽  
Author(s):  
Zhi-Yuan ZHENG ◽  
Tie-Xin CHEN ◽  
Liang CAO ◽  
Yu-Yan HAN ◽  
Fa-Qiang XU
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays

A first-principles study on the electronic and optical properties of a type-II C2N/g-ZnO van der Waals heterostructure

2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dft Calculations ◽  
First Principles ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

scholarly journals Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

Nanophotonics ◽  
2020 ◽  
Vol 9 (15) ◽  
pp. 4497-4503
Author(s):  
Liying Zhang ◽  
Xiangqian Xiu ◽  
Yuewen Li ◽  
Yuxia Zhu ◽  
Xuemei Hua ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Light Trapping ◽  
High Surface ◽  
Volume Ratio ◽  
Average Diameter ◽  
Nanowire Arrays ◽  
Etching Technique ◽  
Inductively Coupled ◽  
Solar Blind ◽  
Vertically Aligned

AbstractVertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.

scholarly journals Vertically Aligned CsPbBr3 Nanowire Arrays with Template-Induced Crystal Phase Transition and Stability

2021 ◽  
Vol 125 (8) ◽  
pp. 4860-4868
Author(s):  
Zhaojun Zhang ◽  
Klara Suchan ◽  
Jun Li ◽  
Crispin Hetherington ◽  
Alexander Kiligaridis ◽  
...  
Keyword(s):  
Phase Transition ◽  
Nanowire Arrays ◽  
Crystal Phase ◽  
Vertically Aligned ◽  
Crystal Phase Transition
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