All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing

2010 ◽  
Vol 20 (1) ◽  
pp. 167-172 ◽  
Author(s):  
Benjamin S. Mashford ◽  
Tich-Lam Nguyen ◽  
Gerard J. Wilson ◽  
Paul Mulvaney
Keyword(s):  
Quantum Dot ◽  
Low Cost ◽  
Chemical Processing ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Wet Chemical

High-brightness perovskite quantum dot light-emitting devices using inkjet printing

2021 ◽  
Vol 93 ◽  
pp. 106168
Author(s):  
Chunbo Zheng ◽  
Xin Zheng ◽  
Chen Feng ◽  
Songman Ju ◽  
Zhongwei Xu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Inkjet Printing ◽  
High Brightness ◽  
Light Emitting ◽  
Light Emitting Devices

The Effect of Particle Size on the Charge Balance Property of Quantum Dot Light-Emitting Devices Using Zinc Oxide Nanoparticles

2021 ◽  
Vol 21 (7) ◽  
pp. 3795-3799
Author(s):  
Mi-Young Ha ◽  
Chang Kyo Kim ◽  
Dae-Gyu Moon
Keyword(s):  
Particle Size ◽  
Zinc Oxide ◽  
Quantum Dot ◽  
Zinc Oxide Nanoparticles ◽  
Transport Layer ◽  
Oxide Nanoparticles ◽  
Zno Nps ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Maximum Current

Zinc oxide nanoparticles (ZnO NPs) have been widely used as an inorganic electron transport layer (ETL) in quantum dot light-emitting devices (QLEDs) due to their excellent electrical properties. Here, we report the effect of ZnO NPs inorganic ETL of different particle sizes on the electrical and optical properties of QLEDs. We synthesized ZnO NPs into the size of 3 nm and 8 nm respectively and used them as an inorganic ETL of QLEDs. The particle size and crystal structure of the synthesized ZnO NPs were verified by Transmission electron microscopy (TEM) analysis and X-ray pattern analysis. The device with 8 nm ZnO NPs ETL exhibited higher efficiency than the 3 nm ZnO NPs ETL device in the single hole transport layer (HTL) QLEDs. The maximum current efficiency of 19.0 cd/A was achieved in the device with 8 nm ZnO NPs layer. We obtained the maximum current efficiency of 17.5 cd/A in 3 nm ZnO NPs device by optimizing bilayer HTL and ZnO NPs ETL.

Recent advances in quantum dot-based light-emitting devices: Challenges and possible solutions

2019 ◽  
Vol 24 ◽  
pp. 69-93 ◽  
Author(s):  
Zhiwen Yang ◽  
Mengyu Gao ◽  
Weijie Wu ◽  
Xuyong Yang ◽  
Xiao Wei Sun ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Recent Advances

Tuning the performance of hybrid organic/inorganic quantum dot light-emitting devices

2003 ◽  
Vol 4 (2-3) ◽  
pp. 123-130 ◽  
Author(s):  
Seth Coe-Sullivan ◽  
Wing-Keung Woo ◽  
Jonathan S. Steckel ◽  
Moungi Bawendi ◽  
Vladimir Bulović
Keyword(s):  
Quantum Dot ◽  
Light Emitting ◽  
Light Emitting Devices

Microfluidic paper-based analytical devices fabricated by low-cost photolithography and embossing of Parafilm®

Lab on a Chip ◽  
2015 ◽  
Vol 15 (7) ◽  
pp. 1642-1645 ◽  
Author(s):  
Ling Yu ◽  
Zhuan Zhuan Shi
Keyword(s):  
Low Cost ◽  
Chemical Processing ◽  
Wet Chemical

The combination of photolithography-patterning and embossing of a Parafilm® can fabricate microfluidic paper-based analytical devices (μPADs) without the use of a wax printer, cutter plotter and wet-chemical processing of paper.

High-efficiency, deep blue ZnCdS/CdxZn1−xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18%

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5650-5657 ◽  
Author(s):  
Ouyang Wang ◽  
Lei Wang ◽  
Zhaohan Li ◽  
Qiulei Xu ◽  
Qingli Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Deep Blue

18% peak external quantum efficiency (EQE) for deep blue QLEDs by using ZnCdS/CdxZn1−xS/ZnS quantum dots.

Research progress of quantum dot light-emitting devices for display application

2021 ◽  
Vol 36 (1) ◽  
pp. 176-186
Author(s):  
Xiao-ya GUAN ◽  
◽  
Hong-zhe WANG ◽  
Huai-bin SHEN ◽  
Zu-liang DU
Keyword(s):  
Quantum Dot ◽  
Research Progress ◽  
Light Emitting ◽  
Light Emitting Devices

Efficiency enhancement in quantum dot light-emitting devices employing trapping-type electron buffer layer

2019 ◽  
Vol 66 ◽  
pp. 211-215 ◽  
Author(s):  
Haiwei Feng ◽  
Ziwei Yu ◽  
Jiaxin Zhang ◽  
Teng Pan ◽  
Shihao Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Buffer Layer ◽  
Efficiency Enhancement ◽  
Light Emitting ◽  
Light Emitting Devices
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