scholarly journals Perspective: Toward highly stable electroluminescent quantum dot light-emitting devices in the visible range

2020 ◽  
Vol 116 (1) ◽  
pp. 010502 ◽  
Author(s):  
Tyler Davidson-Hall ◽  
Hany Aziz
Keyword(s):  
Quantum Dot ◽  
Visible Range ◽  
Light Emitting ◽  
Light Emitting Devices

High-brightness perovskite quantum dot light-emitting devices using inkjet printing

2021 ◽  
Vol 93 ◽  
pp. 106168
Author(s):  
Chunbo Zheng ◽  
Xin Zheng ◽  
Chen Feng ◽  
Songman Ju ◽  
Zhongwei Xu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Inkjet Printing ◽  
High Brightness ◽  
Light Emitting ◽  
Light Emitting Devices

The Effect of Particle Size on the Charge Balance Property of Quantum Dot Light-Emitting Devices Using Zinc Oxide Nanoparticles

2021 ◽  
Vol 21 (7) ◽  
pp. 3795-3799
Author(s):  
Mi-Young Ha ◽  
Chang Kyo Kim ◽  
Dae-Gyu Moon
Keyword(s):  
Particle Size ◽  
Zinc Oxide ◽  
Quantum Dot ◽  
Zinc Oxide Nanoparticles ◽  
Transport Layer ◽  
Oxide Nanoparticles ◽  
Zno Nps ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Maximum Current

Zinc oxide nanoparticles (ZnO NPs) have been widely used as an inorganic electron transport layer (ETL) in quantum dot light-emitting devices (QLEDs) due to their excellent electrical properties. Here, we report the effect of ZnO NPs inorganic ETL of different particle sizes on the electrical and optical properties of QLEDs. We synthesized ZnO NPs into the size of 3 nm and 8 nm respectively and used them as an inorganic ETL of QLEDs. The particle size and crystal structure of the synthesized ZnO NPs were verified by Transmission electron microscopy (TEM) analysis and X-ray pattern analysis. The device with 8 nm ZnO NPs ETL exhibited higher efficiency than the 3 nm ZnO NPs ETL device in the single hole transport layer (HTL) QLEDs. The maximum current efficiency of 19.0 cd/A was achieved in the device with 8 nm ZnO NPs layer. We obtained the maximum current efficiency of 17.5 cd/A in 3 nm ZnO NPs device by optimizing bilayer HTL and ZnO NPs ETL.

Recent advances in quantum dot-based light-emitting devices: Challenges and possible solutions

2019 ◽  
Vol 24 ◽  
pp. 69-93 ◽  
Author(s):  
Zhiwen Yang ◽  
Mengyu Gao ◽  
Weijie Wu ◽  
Xuyong Yang ◽  
Xiao Wei Sun ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Recent Advances

Tuning the performance of hybrid organic/inorganic quantum dot light-emitting devices

2003 ◽  
Vol 4 (2-3) ◽  
pp. 123-130 ◽  
Author(s):  
Seth Coe-Sullivan ◽  
Wing-Keung Woo ◽  
Jonathan S. Steckel ◽  
Moungi Bawendi ◽  
Vladimir Bulović
Keyword(s):  
Quantum Dot ◽  
Light Emitting ◽  
Light Emitting Devices

High-efficiency, deep blue ZnCdS/CdxZn1−xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18%

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5650-5657 ◽  
Author(s):  
Ouyang Wang ◽  
Lei Wang ◽  
Zhaohan Li ◽  
Qiulei Xu ◽  
Qingli Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Deep Blue

18% peak external quantum efficiency (EQE) for deep blue QLEDs by using ZnCdS/CdxZn1−xS/ZnS quantum dots.

Research progress of quantum dot light-emitting devices for display application

2021 ◽  
Vol 36 (1) ◽  
pp. 176-186
Author(s):  
Xiao-ya GUAN ◽  
◽  
Hong-zhe WANG ◽  
Huai-bin SHEN ◽  
Zu-liang DU
Keyword(s):  
Quantum Dot ◽  
Research Progress ◽  
Light Emitting ◽  
Light Emitting Devices

Efficiency enhancement in quantum dot light-emitting devices employing trapping-type electron buffer layer

2019 ◽  
Vol 66 ◽  
pp. 211-215 ◽  
Author(s):  
Haiwei Feng ◽  
Ziwei Yu ◽  
Jiaxin Zhang ◽  
Teng Pan ◽  
Shihao Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Buffer Layer ◽  
Efficiency Enhancement ◽  
Light Emitting ◽  
Light Emitting Devices

ZnO Nanocrystal Thin Films for Quantum-Dot Light-Emitting Devices

2020 ◽  
Vol 3 (8) ◽  
pp. 7535-7542
Author(s):  
Wooje Han ◽  
Seongkeun Oh ◽  
Chan Lee ◽  
Jiwan Kim ◽  
Hyung-Ho Park
Keyword(s):  
Thin Films ◽  
Quantum Dot ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Zno Nanocrystal

New Structures and Materials for Next Generation Photonic Technology

2011 ◽  
Vol 120 ◽  
pp. 556-560
Author(s):  
D. H Zhang ◽  
T. Mei ◽  
D.Y. Tang ◽  
X. C. Yuan ◽  
T. P. Chen
Keyword(s):  
Light Source ◽  
Silicon On Insulator ◽  
Visible Range ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Light Manipulation ◽  
Loss Compensation ◽  
Photonic Circuit ◽  
Nano Crystal ◽  
First Time

We present the main results achieved in light source, light manipulation and imaging and sensing in our competitive research program. In light source, we have for the first time developed grapheme mode-locked lasers and dark pause lasers as well as nano-crystal Si based light emitting devices with colour tunable. In light manipulation, loss compensation of surface plasmon polaritons (SPPs) using semiconductor gain media was studied theoretically and demonstrated experimentally and the SPP propagation can be controlled through electrical pumping. Microring resonators based on silicon on insulator and III-V semiconductors technologies have been successfully fabricated and they can be used as filter and switch in the photonic circuit. In imaging and sensing, both SPP and metamaterial based lenses are developed and resolution far beyond diffraction limit in visible range has been realized. Broadband photodetectors based on dilute nitrides are also demonstrated.

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