scholarly journals Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films

Materials ◽  
2014 ◽  
Vol 7 (11) ◽  
pp. 7339-7348 ◽  
Author(s):  
Fu-Chien Chiu
2014 ◽  
Vol 63 (5) ◽  
pp. 056801
Author(s):  
Zhao Hui-Xu ◽  
Chen Xin-Liang ◽  
Yang Xu ◽  
Du Jian ◽  
Bai Li-Sha ◽  
...  

2020 ◽  
Vol 31 (14) ◽  
pp. 11911-11926 ◽  
Author(s):  
Zohra Nazir Kayani ◽  
Zainab Bashir ◽  
Saira Riaz ◽  
Shahzad Naseem ◽  
Zeb Saddiqe

Author(s):  
T. A. Emma ◽  
M. P. Singh

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.


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