scholarly journals Control of resistive switching behaviors of solution-processed HfOX-based resistive switching memory devices by n-type doping

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21917-21921 ◽  
Author(s):  
Masoud Akbari ◽  
Jang-Sik Lee
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Ta Doping ◽  
Switching Memory

In this study, we investigated the effect of Ni and Ta doping on resistive switching behaviors of solution-processed HfOX-based resistive switching memory (RRAM) devices.

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

2019 ◽  
Vol 45 (5) ◽  
pp. 5724-5730 ◽  
Author(s):  
Huaizu Cai ◽  
Meimei Lao ◽  
Jun Xu ◽  
Yukai Chen ◽  
Chujie Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Switching Memory

Top-Down Synthesis of Hollow Graphene Nanostructures for Use in Resistive Switching Memory Devices

2017 ◽  
Vol 3 (10) ◽  
pp. 1700264 ◽  
Author(s):  
Gopinathan Anoop ◽  
Tae Yeon Kim ◽  
Hye Jeong Lee ◽  
Varij Panwar ◽  
Jeong Hun Kwak ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Top Down ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
Graphene Nanostructures

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Linkage and donor–acceptor effects on resistive switching memory devices of 4-(N-carbazolyl)triphenylamine-based polymers

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28815-28819 ◽  
Author(s):  
Tzu-Tien Huang ◽  
Chia-Liang Tsai ◽  
Sheng-Huei Hsiao ◽  
Guey-Sheng Liou
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Linkage Effect ◽  
Donor Acceptor ◽  
Switching Memory

In order to gain deeper insight about the linkage effect and donor–acceptor effect on memory behavior (from DRAM to WORM), 4-(N-carbazolyl)triphenylamine-based polyimides and polyamides were synthesized and their memory behaviours were investigated.

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