Extended vapor–liquid–solid growth and field emission properties of aluminium nitride nanowires

2003 ◽  
Vol 13 (8) ◽  
pp. 2024-2027 ◽  
Author(s):  
Qiang Wu ◽  
Zheng Hu ◽  
Xizhang Wang ◽  
Yinong Lu ◽  
Kaifu Huo ◽  
...  
Keyword(s):  
Field Emission ◽  
Aluminium Nitride ◽  
Vapor Liquid Solid ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Vapor–Liquid–Solid Growth of One-Dimensional Tin Sulfide (SnS) Nanostructures with Promising Field Emission Behavior

2014 ◽  
Vol 6 (3) ◽  
pp. 2018-2025 ◽  
Author(s):  
Sachin R. Suryawanshi ◽  
Sambhaji S. Warule ◽  
Sandip S. Patil ◽  
Kashinath R. Patil ◽  
Mahendra A. More
Keyword(s):  
Field Emission ◽  
Tin Sulfide ◽  
Vapor Liquid Solid ◽  
One Dimensional ◽  
Emission Behavior ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Enhanced Field Emission Properties of Carbon Nanotube Based Field Emitters by Dynamic Oxidation

2013 ◽  
Vol 9 (5) ◽  
pp. 619-623 ◽  
Author(s):  
Shama Parveen ◽  
Samina Husain ◽  
Avshish Kumar ◽  
Javid Ali ◽  
Mubashshir Husain ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Field Emitters ◽  
Dynamic Oxidation

scholarly journals Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1681
Author(s):  
Hadi Hijazi ◽  
Vladimir G. Dubrovskii
Keyword(s):  
Surface Energy ◽  
Continuous Process ◽  
Vapor Liquid Solid ◽  
Gaas Nanowires ◽  
Monolayer Growth ◽  
Surface Energetics ◽  
Monolayer Expansion ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

Electronic Structure and Field‐Emission Properties of Nitrogen‐Doped Carbon Nanotubes

2006 ◽  
Vol 14 (2-3) ◽  
pp. 151-164 ◽  
Author(s):  
A. V. Okotrub ◽  
L. G. Bulusheva ◽  
V. V. Belavin ◽  
A. G. Kudashov ◽  
A. V. Gusel'nikov ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electronic Structure ◽  
Field Emission ◽  
Emission Properties ◽  
Nitrogen Doped ◽  
Field Emission Properties ◽  
Nitrogen Doped Carbon
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