Ultrasharp tips for field emission applications prepared by the vapor–liquid–solid growth technique

1993 ◽  
Vol 11 (2) ◽  
pp. 449 ◽  
Author(s):  
E. I. Givargizov
Keyword(s):  
Field Emission ◽  
Vapor Liquid Solid ◽  
Growth Technique ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Extended vapor–liquid–solid growth and field emission properties of aluminium nitride nanowires

2003 ◽  
Vol 13 (8) ◽  
pp. 2024-2027 ◽  
Author(s):  
Qiang Wu ◽  
Zheng Hu ◽  
Xizhang Wang ◽  
Yinong Lu ◽  
Kaifu Huo ◽  
...  
Keyword(s):  
Field Emission ◽  
Aluminium Nitride ◽  
Vapor Liquid Solid ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Fabrication of YBa2Cu3O y coated conductor by Vapor-Liquid-Solid growth technique using a Reel-to-Reel system

2020 ◽  
Vol 1590 ◽  
pp. 012029
Author(s):  
Kento Yasuda ◽  
Tomohiro Ito ◽  
Yuji Tsuchiya ◽  
Yusuke Ichino ◽  
Ataru Ichinose ◽  
...  
Keyword(s):  
Coated Conductor ◽  
Vapor Liquid Solid ◽  
Growth Technique ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Vapor–Liquid–Solid Growth of One-Dimensional Tin Sulfide (SnS) Nanostructures with Promising Field Emission Behavior

2014 ◽  
Vol 6 (3) ◽  
pp. 2018-2025 ◽  
Author(s):  
Sachin R. Suryawanshi ◽  
Sambhaji S. Warule ◽  
Sandip S. Patil ◽  
Kashinath R. Patil ◽  
Mahendra A. More
Keyword(s):  
Field Emission ◽  
Tin Sulfide ◽  
Vapor Liquid Solid ◽  
One Dimensional ◽  
Emission Behavior ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts

2007 ◽  
Vol 556-557 ◽  
pp. 477-480 ◽  
Author(s):  
Hervé Peyre ◽  
Nada Habka ◽  
Véronique Soulière ◽  
Maher Soueidan ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Vapor Liquid Solid ◽  
Growth Technique ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

We report the results of a SIMS and micro-Raman investigation performed on cubic (3C) SiC crystals grown on hexagonal SiC seeds using a Ge-Si bath and the so-called Vapor Liquid Solid growth technique. From SIMS measurements, we find a Ge concentration which, roughly, scales like the Ge concentration in the melt and, in term of micro-Raman measurements, explains the presence of weak but discernable Ge-Ge peaks around 300 cm-1. Since no similar Si-Si vibrations are found, this discard the possibility of having at the same time both Ge and Si constitutional super-cooling with two separate Ge and Si phases.

Indium and tin oxide nanowires by vapor-liquid-solid growth technique

2006 ◽  
Vol 35 (2) ◽  
pp. 200-206 ◽  
Author(s):  
Pho Nguyen ◽  
Sreeram Vaddiraju ◽  
M. Meyyappan
Keyword(s):  
Tin Oxide ◽  
Vapor Liquid Solid ◽  
Growth Technique ◽  
Oxide Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid
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