Modeling of ion transport processes in disordered solids: Monte Carlo simulations of the low-temperature particle dynamics in the random barrier model

2001 ◽  
Vol 3 (23) ◽  
pp. 5093-5098 ◽  
Author(s):  
Bernhard Roling
Keyword(s):  
Monte Carlo ◽  
Low Temperature ◽  
Monte Carlo Simulations ◽  
Ion Transport ◽  
Particle Dynamics ◽  
Transport Processes ◽  
Disordered Solids ◽  
Barrier Model ◽  
Random Barrier

scholarly journals Monte Carlo Simulation of Hall Effect in n-Type GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 570-575 ◽  
Author(s):  
J.D. Albrecht ◽  
P.P. Ruden ◽  
E. Bellotti ◽  
K.F. Brennan
Keyword(s):  
Monte Carlo ◽  
Low Temperature ◽  
Monte Carlo Simulations ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Liquid Nitrogen Temperature ◽  
Inelastic Process ◽  
Polar Optical Phonon ◽  
Wurtzite Phase ◽  
Hall Factor

Results of Monte Carlo simulations of electron transport for wurtzite phase GaN in crossed, weak electric and magnetic fields are presented. It is found that the Hall factor, rH = μHall/μdrift, decreases monotonically as the temperature increases from 77K to 400K.The low temperature value of the Hall factor increases significantly with increasing doping concentration. The Monte Carlo simulations take into account the electron-lattice interaction through polar optical phonon scattering, deformation potential acoustic phonon scattering (treated as an inelastic process), and piezoelectric acoustic phonon scattering. Impurity scattering due to ionized and neutral donors is also included, with the latter found to be important at low temperature due to the relatively large donor binding energy which implies considerable carrier freeze-out already at liquid nitrogen temperature. The temperature dependences of the electron concentration, drift mobility, and Hall factor are calculated for donor concentrations equal to 5 × 1016 cm−3, 1017 cm−3, and 5 × 1017 cm−3. The Monte Carlo simulations are compared to classical analytical results obtained using the relaxation-time approximation, which is found to be adequate at low temperatures and sufficiently low carrier concentrations so that inelastic scattering effects due to optical phonons and degeneracy effects are negligible. The influence of dislocations on the Hall factor is discussed briefly.

scholarly journals MULTILEVEL BLOCKING MONTE CARLO SIMULATIONS FOR QUANTUM DOTS

2001 ◽  
Vol 15 (10n11) ◽  
pp. 1416-1425 ◽  
Author(s):  
R. EGGER ◽  
C. H. MAK
Keyword(s):  
Quantum Dots ◽  
Monte Carlo ◽  
Low Temperature ◽  
Monte Carlo Simulations ◽  
Strongly Correlated Electrons ◽  
Correlated Electrons ◽  
Strongly Correlated ◽  
Path Integral Monte Carlo ◽  
Sign Problem ◽  
Simulation Results

This article provides an introduction to the ideas behind the multilevel blocking (MLB) approach to the fermion sign problem in path-integral Monte Carlo simulations, and also gives a detailed discussion of MLB results for quantum dots. MLB can turn the exponential severity of the sign problem into an algebraic one, thereby enabling numerically exact studies of otherwise inaccessible systems. Low-temperature simulation results for up to eight strongly correlated electrons in a parabolic 20 quantum dot are presented.

Monte Carlo Simulation of Hall Effect in n-Type GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
J.D. Albrecht ◽  
P.P. Ruden ◽  
E. Bellotti ◽  
K.F. Brennan
Keyword(s):  
Monte Carlo ◽  
Low Temperature ◽  
Monte Carlo Simulations ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Liquid Nitrogen Temperature ◽  
Inelastic Process ◽  
Polar Optical Phonon ◽  
Wurtzite Phase ◽  
Hall Factor

AbstractResults of Monte Carlo simulations of electron transport for wurtzite phase GaN in crossed, weak electric and magnetic fields are presented. It is found that the Hall factor, τH = μHall/μdrift, decreases monotonically as the temperature increases from 77K to 400K. The low temperature value of the Hall factor increases significantly with increasing doping concentration. The Monte Carlo simulations take into account the electron-lattice interaction through polar optical phonon scattering, deformation potential acoustic phonon scattering (treated as an inelastic process), and piezoelectric acoustic phonon scattering. Impurity scattering due to ionized and neutral donors is also included, with the latter found to be important at low temperature due to the relatively large donor binding energy which implies considerable carrier freeze-out already at liquid nitrogen temperature. The temperature dependences of the electron concentration, drift mobility, and Hall factor are calculated for donor concentrations equal to 5 × 1016 cm-3, 1017 cm-3, and 5 × 1017 cm-3. The Monte Carlo simulations are compared to classical analytical results obtained using the relaxation-time approximation, which is found to be adequate at low temperatures and sufficiently low carrier concentrations so that inelastic scattering effects due to optical phonons and degeneracy effects are negligible. The influence of dislocations on the Hall factor is discussed briefly.

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