Particle dynamics in the random barrier model: Monte Carlo simulations at low temperatures

2000 ◽  
Vol 61 (9) ◽  
pp. 5993-5997 ◽  
Author(s):  
B. Roling
2001 ◽  
Vol 63 (18) ◽  
Author(s):  
Helmut G. Katzgraber ◽  
Matteo Palassini ◽  
A. P. Young

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Raymond Walter ◽  
Sergey Prosandeev ◽  
Charles Paillard ◽  
L. Bellaiche

AbstractNegative capacitance in BaTiO3/SrTiO3 superlattices is investigated by Monte Carlo simulations in an atomistic effective Hamiltonian model, using fluctuation formulas for responses to the local macroscopic field that incorporates depolarizing fields. We show that epitaxial strain can tune the negative capacitance of the BaTiO3 ferroelectric layer and the overall capacitance of the system. In addition, we predict and explain an original switching of the negative capacitance from the BaTiO3 layer to the SrTiO3 layer at low temperatures for intermediate strains.


2013 ◽  
Vol 27 (05) ◽  
pp. 1350010 ◽  
Author(s):  
SUNIL KIM ◽  
JOONHYUN YEO ◽  
CHAN IM

We study the distribution of transit times in Monte Carlo simulations of the Gaussian disorder model (GDM). The GDM is one of the most successful models to describe the charge transport in random organic materials. The transit time is the time it takes for a charge carrier to travel across a sample. We find that the distribution of transit times over many charge carriers and over different realizations of Gaussian energies shows a heavy tail in the long time limit at low temperatures. This heavy tail can be described by a power law with an exponent that depends on temperature. This sets a limitation on the calculation of mobility of charge carriers using an average transit time at low temperatures. We discuss the implication of these results on dispersive transport.


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