scholarly journals Modeling out-of-plane actuation in thin-film nematic polymer networks: From chiral ribbons to auto-origami boxes via twist and topology

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Vianney Gimenez-Pinto ◽  
Fangfu Ye ◽  
Badel Mbanga ◽  
Jonathan V. Selinger ◽  
Robin L. B. Selinger
Keyword(s):  
Thin Film ◽  
Polymer Networks ◽  
And Topology ◽  
Out Of Plane ◽  
Nematic Polymer

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

In-plane versus out-of-plane dielectric response in the thin-film relaxorPb(Sc1∕2Ta1∕2)O3

2006 ◽  
Vol 73 (21) ◽  
Author(s):  
K. Brinkman ◽  
A. Tagantsev ◽  
V. Sherman ◽  
D. Su ◽  
N. Setter
Keyword(s):  
Thin Film ◽  
Dielectric Response ◽  
Out Of Plane ◽  
Plane Versus

Epitaxial growth of La–Ca–Mn–O thin film on out-of-plane twinned LaAlO[sub 3]

2000 ◽  
Vol 18 (5) ◽  
pp. 2437 ◽  
Author(s):  
J.-H. Song ◽  
K. K. Kim ◽  
Y. J. Oh ◽  
H.-J. Jung ◽  
W. K. Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Out Of Plane

Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity

Nano Letters ◽  
2019 ◽  
Vol 20 (2) ◽  
pp. 1047-1053
Author(s):  
Tingting Yao ◽  
Yixiao Jiang ◽  
Chunlin Chen ◽  
Xuexi Yan ◽  
Ang Tao ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Oxide Thin Film ◽  
Out Of Plane ◽  
Ferroelectric Oxide

A In Situ Measuring Method for Stress Gradient of a MEMS Film

2009 ◽  
Vol 60-61 ◽  
pp. 357-360 ◽  
Author(s):  
Han Chen ◽  
Hua Rong ◽  
Ming Wang
Keyword(s):  
Thin Film ◽  
Circular Plate ◽  
Stress Gradient ◽  
Measuring Method ◽  
Mechanical Parameter ◽  
Curvature Radius ◽  
Mems Devices ◽  
Out Of Plane

The stress gradient of a deposited thin-film is a mechanical parameter that affects the performance of MEMS devices, so in-situ measuring stress gradient of a thin-film is great significant. A new in-situ measuring method based on a center-anchored circular plate is presented. The Mirau interferometer has been used to measure the out-of-plane height at the edge of circular plate, then the curvature radius of the plate and the stress gradient of the film can be calculated. The measuring method has been verified by CoventorWare. The accuracy of the presented measuring method is ideal. The advantages of the method also have been discussed.

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

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