scholarly journals Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Ligang Ma ◽  
Wenchao Liu ◽  
Hongling Cai ◽  
Fengming Zhang ◽  
Xiaoshan Wu
Keyword(s):  
Low Temperature ◽  
Cdte Film ◽  
In Situ Growth ◽  
Cds Nanowire ◽  
Template Free ◽  
P Type

Low-Temperature in Situ Growth of Graphene on Metallic Substrates and Its Application in Anticorrosion

2015 ◽  
Vol 8 (1) ◽  
pp. 502-510 ◽  
Author(s):  
Minmin Zhu ◽  
Zehui Du ◽  
Zongyou Yin ◽  
Wenwen Zhou ◽  
Zhengdong Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
In Situ Growth ◽  
Metallic Substrates

In situ growth of a P-type CuSCN/Cu2O heterojunction to enhance charge transport and suppress charge recombination

2019 ◽  
Vol 7 (23) ◽  
pp. 6872-6878 ◽  
Author(s):  
Linghui Li ◽  
Junhui Liang ◽  
Laishun Qin ◽  
Da Chen ◽  
Yuexiang Huang
Keyword(s):  
Charge Transport ◽  
Alkali Treatment ◽  
Charge Recombination ◽  
Treatment Technique ◽  
In Situ Growth ◽  
Interface Recombination ◽  
P Type

In situ growth CuSCN/Cu2O heterojunction using a simple alkali treatment technique, to promote charge transport and suppress interface recombination.

P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Mbe Growth ◽  
In Situ Fabrication ◽  
P Type ◽  
Arsenic Incorporation ◽  
Planar Doping

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

scholarly journals In situ growth of large-area and self-aligned graphene nanoribbon arrays on liquid metal

2020 ◽  
Author(s):  
Le Cai ◽  
Wanzhen He ◽  
Xudong Xue ◽  
Jianyao Huang ◽  
Ke Zhou ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Graphene Nanoribbons ◽  
Chemical Vapour ◽  
Copper Surface ◽  
In Situ Growth ◽  
Large Area ◽  
High Quality ◽  
Hydrogen Flow ◽  
Template Free

Abstract Intrinsic graphene features semi-metallic characteristics that limit its applications in electronic devices, whereas graphene nanoribbons (GNRs) are promising semiconductors owing to their bandgap-opening feature. However, the controllable mass-fabrication of high-quality GNR arrays remains a major challenge. In particular, the in situ growth of GNR arrays through template-free chemical vapour deposition (CVD) has not been realized. Herein, we report a template-free CVD strategy to grow large-area, high-quality, and self-aligned GNR arrays on the liquid copper surface. The width of as-grown GNR could be optimized to sub-10 nm with aspect ratio up to 387, which is higher than those of reported CVD-GNRs. The study of the growth mechanism indicates that a unique comb-like etching-regulated growth process caused by a trace hydrogen flow guides the formation of the mass-produced self-aligned GNR arrays. Our approach is operationally simple and efficient, offering an assurance for the use of GNR arrays in integrated circuits.

Characterization of In Situ P-Type and N-Type Doped Si and GeXSi1−X Films Grown by Low Temperature Remote Plasma Chemical Vapor Deposition

1992 ◽  
Vol 268 ◽  
Author(s):  
S. Thomas ◽  
J. Irby ◽  
D. Kinosky ◽  
R. Qian ◽  
I. Iqbal ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Future Generation ◽  
Doping Profile ◽  
Remote Plasma ◽  
Plasma Chemical Vapor Deposition ◽  
P Type

ABSTRACTLow temperature Si and Si1−xGex epitaxy is one of the major thrusts in the trend towards low temperature Si processing for future generation ULSI circuits and novel Si-based devices. A remote plasma-enhanced chemical vapor deposition (RPCVD) technique has been developed to achieve Si homoepitaxy and Si1−xGex heteroepitaxy at low temperatures (≤450'C). P-type films have been grown by introducing 90 ppm or 5000 ppm B2H6/He into the system during the growth process to achieve in situ electrically active boron doping. A mesa diode structure with minimal thermal budget in the fabrication process has been employed to evaluate the properties of the boron-doped Si and Si1−xGex films grown at 450°C by RPCVD. Leakage current densities are reduced for diodes grown at 14–18 W (40–50 Å/min. growth rates) compared to similar devices grown at 6.6 W (5 Å/min.). N-type films have been grown by the introduction of 50 ppm PH3/He. Secondary ion mass spectroscopy (SIMS) has been employed to analyze the boron and phosphorus incorporation efficiencies and doping profiles under different conditions. Boron and phosphorus doping profile transitions as sharp as 50–100 Å/decade have been achieved. Transmission electron microscopy (TEM) has been used to investigate the microstructure of the B-doped films.

In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors

2017 ◽  
Vol 5 (10) ◽  
pp. 2524-2530 ◽  
Author(s):  
Ao Liu ◽  
Shengbin Nie ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Chundan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Naoh Solution ◽  
Temperature Solution ◽  
One Step ◽  
P Type

Solution-processed p-type Cu2O thin films were fabricated via in-situ reaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

2010 ◽  
Vol 645-648 ◽  
pp. 925-928 ◽  
Author(s):  
Bharat Krishnan ◽  
Joseph Neil Merrett ◽  
Galyna Melnychuk ◽  
Yaroslav Koshka
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Passivation ◽  
Drift Region ◽  
Pin Diodes ◽  
Growth Technique ◽  
Growth Method ◽  
Heavily Doped ◽  
P Type

In this work, the benefits of the low-temperature halo-carbon epitaxial growth at 1300oC to form anodes of 4H-SiC PiN diodes were investigated. Regular-temperature epitaxial growth was used to form an 8.6 μm-thick n-type drift region with net donor concentration of 6.45x1015 cm-3. Trimethylaluminum doping, in situ during blanket low-temperature halo-carbon epitaxial growth, was used to form heavily doped p-type layers. Forward I-V characteristics measured from diodes having different anode areas indicated that the new epitaxial growth technique provides anodes with low values of the series resistance, even without contact annealing. At room temperature, a 100 μm-diameter diode had a forward voltage of 3.75 V at 1000A/cm² before annealing and 3.23 V after annealing for 2 min at 750°C. The reverse breakdown voltage was more than 680 V (on average) in the devices without edge termination or surface passivation.

In-situ growth of superconducting MgB2 thin films by HPCVD method at low temperature

2007 ◽  
Vol 467 (1-2) ◽  
pp. 1-3 ◽  
Author(s):  
J. Yang ◽  
S. Wang ◽  
F.S. Yang ◽  
Z.P. Zhang ◽  
Z. Ding ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
In Situ Growth ◽  
Mgb2 Thin Films
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