scholarly journals Optical Relaxation Time Enhancement in Graphene-Passivated Metal Films

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Sunny Chugh ◽  
Ruchit Mehta ◽  
Mengren Man ◽  
Zhihong Chen
Keyword(s):  
Relaxation Time ◽  
Metal Films ◽  
Passivated Metal

scholarly journals A New Analytical Expression for the T.C.R. of Thin Monocrystalline Metal Films

1979 ◽  
Vol 5 (4) ◽  
pp. 209-213 ◽  
Author(s):  
C. R. Tellier
Keyword(s):  
Electrical Conductivity ◽  
Relaxation Time ◽  
Reflection Coefficient ◽  
Grain Boundary ◽  
Metal Film ◽  
Approximate Equation ◽  
Metal Films ◽  
Exact Equation ◽  
Temperature Coefficient Of Resistivity ◽  
Comparison Of The Results

The analysis of electrical conductivity of continuous thin monocrystalline metal film has been treated by assuming that the scattering from other sources than grain-boundaries can be described by an effective relaxation time. This relaxation time method is applied to the temperature coefficient of resistivity and leads to an analytical approximate equation in terms of the grain-boundary reflection coefficientrand the reduced thicknessk.Comparison of the results with those deduced from the exact equation (derived from the Mayadas and Shatzkes theory) shows that they deviate by less than 5% in largek–,p–, andr– ranges.

Frequency dependence of the Drude relaxation time in metal films

1974 ◽  
Vol 9 (4) ◽  
pp. 1299-1303 ◽  
Author(s):  
S. R. Nagel ◽  
S. E. Schnatterly
Keyword(s):  
Relaxation Time ◽  
Frequency Dependence ◽  
Metal Films

Perturbations in transport properties of thin metal films due to energy-dependent relaxation time

1981 ◽  
Vol 68 (2) ◽  
pp. 477-482 ◽  
Author(s):  
C. R. Pichard ◽  
C. R. Tellier ◽  
L. Ouarbya ◽  
A. J. Tosser
Keyword(s):  
Relaxation Time ◽  
Transport Properties ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Energy Dependent

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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