Transport properties of thin metal films with energy‐dependent relaxation time

1981 ◽  
Vol 52 (9) ◽  
pp. 5859-5862 ◽  
Author(s):  
Ijaz‐ur‐ Rahman
Keyword(s):  
Relaxation Time ◽  
Transport Properties ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Energy Dependent

Perturbations in transport properties of thin metal films due to energy-dependent relaxation time

1981 ◽  
Vol 68 (2) ◽  
pp. 477-482 ◽  
Author(s):  
C. R. Pichard ◽  
C. R. Tellier ◽  
L. Ouarbya ◽  
A. J. Tosser
Keyword(s):  
Relaxation Time ◽  
Transport Properties ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Energy Dependent

Linearized equations for the electronic transport properties of thin metal films

1984 ◽  
Vol 19 (12) ◽  
pp. 4138-4146 ◽  
Author(s):  
V. I. Vatamanyuk ◽  
A. J. Tosser ◽  
C. R. Pichard ◽  
C. R. Tellier
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Linearized Equations ◽  
Electronic Transport Properties

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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