scholarly journals Aerosol assisted chemical vapour deposition of gas sensitive SnO2 and Au-functionalised SnO2 nanorods via a non-catalysed vapour solid (VS) mechanism

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Stella Vallejos ◽  
Soultana Selina ◽  
Fatima Ezahra Annanouch ◽  
Isabel Gràcia ◽  
Eduard Llobet ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Sno2 Nanorods ◽  
Vs Mechanism

Synthesis and Growth Mechanism of Catalyst-Free ZnO Nanowires Using Chemical Vapour Deposition

2012 ◽  
Vol 620 ◽  
pp. 320-324 ◽  
Author(s):  
Nur Atiqah Binti Hamzah ◽  
Swee Yong Pung ◽  
Srimala Sreekantan ◽  
Siti Nor Qurratu Aini Binti Abd Aziz
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Free Exciton ◽  
Chemical Vapour ◽  
Silicon Substrates ◽  
Cvd Method ◽  
Catalyst Free ◽  
Uv Emission ◽  
Zinc Oxides ◽  
Vs Mechanism

Zinc oxides nanowires (ZnO NWs) were successfully synthesized on bare silicon substrates using Chemical vapour deposition (CVD) method without foreign catalyst. The ZnO NWs had good crystal quality as they exhibited a strong UV emission (373 nm) corresponding to the free exciton emission and a weak green arising from defect-related emission in PL measurement. Measurement of low temperature photoluminescence spectra show a peak of free exciton and defect bound excitons. The growth of these catalyst-free ZnO NWs was governed by Vapour-Solid (VS) mechanism.

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings

Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-373-Pr8-380 ◽  
Author(s):  
P. Sourdiaucourt ◽  
A. Derré ◽  
P. Delhaès ◽  
P. David
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hafnium Carbide ◽  
Experimental Conditions

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Aluminium Nitride ◽  
Methyl Groups ◽  
Time Resolved ◽  
Thermally Induced ◽  
Light Emitting ◽  
Carbon Impurities ◽  
Wide Range

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>

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