Ion-beam-induced epitaxial crystallisation (IBIEC) of amorphous silicon layers produced by chemical vapour deposition

W. Skorupa; M. Voelskow; J. Matthäi; P. Knothe

doi:10.1049/el:19880596

Ion-beam-induced epitaxial crystallisation (IBIEC) of amorphous silicon layers produced by chemical vapour deposition

Electronics Letters ◽

10.1049/el:19880596 ◽

1988 ◽

Vol 24 (14) ◽

pp. 875 ◽

Cited By ~ 4

Author(s):

W. Skorupa ◽

M. Voelskow ◽

J. Matthäi ◽

P. Knothe

Keyword(s):

Amorphous Silicon ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Ion Beam ◽

Chemical Vapour

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Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition

Philosophical Magazine B ◽

10.1080/014186300255195 ◽

2000 ◽

Vol 80 (4) ◽

pp. 539-546

Author(s):

L. Calcagno, F. Giorgis, A. Makhtari,

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Ion Beam ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapour ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition

Philosophical Magazine B ◽

10.1080/13642810008209762 ◽

2000 ◽

Vol 80 (4) ◽

pp. 539-546 ◽

Cited By ~ 5

Author(s):

L. Calcagno ◽

F. Giorgis ◽

A. Makhtari ◽

P. Musumeci ◽

R. Reitano

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Ion Beam ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapour ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Homogeneous nucleation during crystallization of amorphous silicon produced by low-pressure chemical vapour deposition

Philosophical Magazine A ◽

10.1080/01418610110067734 ◽

2002 ◽

Vol 82 (1) ◽

pp. 137-165 ◽

Cited By ~ 1

Author(s):

A. Q. He ◽

A. H. Heuer ◽

H. Kahn

Keyword(s):

Amorphous Silicon ◽

Chemical Vapour Deposition ◽

Homogeneous Nucleation ◽

Vapour Deposition ◽

Chemical Vapour ◽

Low Pressure ◽

Pressure Chemical

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Pressure dependence of photoluminescence in amorphous silicon nanopowder produced by plasma enhanced chemical vapour deposition

Materials Science and Technology ◽

10.1080/17432847.1995.11948728 ◽

1995 ◽

Vol 11 (7) ◽

pp. 707-710 ◽

Cited By ~ 3

Author(s):

J. Costa ◽

P. Roura ◽

N.A. Sulimov ◽

G. Sardin ◽

J. Campmany ◽

...

Keyword(s):

Amorphous Silicon ◽

Chemical Vapour Deposition ◽

Pressure Dependence ◽

Vapour Deposition ◽

Chemical Vapour ◽

Silicon Nanopowder

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Ar stabilisation of the cubic/tetragonal phases of ZrO2 in thin films prepared by ion beam induced chemical vapour deposition

Thin Solid Films ◽

10.1016/s0040-6090(01)00834-3 ◽

2001 ◽

Vol 389 (1-2) ◽

pp. 34-42 ◽

Cited By ~ 31

Author(s):

J.P Holgado ◽

J.P Espinós ◽

F Yubero ◽

A Justo ◽

M Ocaña ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Ion Beam ◽

Chemical Vapour

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Correlation between short-range order and hydrogen bonding in hydrogenated amorphous silicon obtained by homogeneous chemical vapour deposition

Philosophical Magazine B ◽

10.1080/01418639408240283 ◽

1994 ◽

Vol 70 (6) ◽

pp. 1187-1193 ◽

Cited By ~ 2

Author(s):

A. Toneva ◽

P. Danesh ◽

L. Vassilev ◽

V. Kudoyarova

Keyword(s):

Hydrogen Bonding ◽

Amorphous Silicon ◽

Chemical Vapour Deposition ◽

Short Range ◽

Short Range Order ◽

Vapour Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapour ◽

Homogeneous Chemical ◽

Hydrogenated Amorphous

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Blue Light Emission from Hydrogenated Amorphous Silicon Carbide Prepared by Xylene Source in Plasma-Enhanced Chemical Vapour Deposition System

Chinese Physics Letters ◽

10.1088/0256-307x/13/12/020 ◽

1996 ◽

Vol 13 (12) ◽

pp. 947-949 ◽

Cited By ~ 6

Author(s):

Tian-fu Ma ◽

Kun-ji Chen ◽

Jia-fang Du ◽

Jun Xu ◽

Wei Li ◽

...

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Blue Light ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Light Emission ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapour ◽

Blue Light Emission ◽

Hydrogenated Amorphous

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Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas Mixtures

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l536 ◽

1995 ◽

Vol 34 (Part 2, No. 5A) ◽

pp. L536-L538 ◽

Cited By ~ 17

Author(s):

Ian S. Osborne ◽

Nobuhiro Hata ◽

Akihisa Matsuda

Keyword(s):

Amorphous Silicon ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapour ◽

Gas Mixtures ◽

Hydrogenated Amorphous

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Thermal modification of wide-bandgap hydrogenated amorphous silicon-carbon alloy films grown by plasma-enhanced chemical vapour deposition from C2H2+SiH4 mixtures

Philosophical Magazine B ◽

10.1080/13642819708202333 ◽

1997 ◽

Vol 75 (4) ◽

pp. 485-496 ◽

Cited By ~ 6

Author(s):

Yichun Liu ◽

F. Giorgis ◽

C. F. Pirri

Keyword(s):

Amorphous Silicon ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapour ◽

Wide Bandgap ◽

Thermal Modification ◽

Alloy Films ◽

Silicon Carbon ◽

Hydrogenated Amorphous

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High dielectric constant titanium oxide grown on amorphous silicon by metal-organic chemical vapour deposition

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/5/006 ◽

2006 ◽

Vol 21 (5) ◽

pp. 604-607 ◽

Cited By ~ 9

Author(s):

Ming-Kwei Lee ◽

Hung-Chang Lee ◽

Chih-Mine Hsu

Keyword(s):

Dielectric Constant ◽

Amorphous Silicon ◽

Titanium Oxide ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

High Dielectric Constant ◽

Chemical Vapour ◽

Organic Chemical ◽

Metal Organic ◽

High Dielectric

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