scholarly journals Erratum: Corrigendum: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Iñigo Bretos ◽  
Ricardo Jiménez ◽  
Monika Tomczyk ◽  
Enrique Rodríguez-Castellón ◽  
Paula M. Vilarinho ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
High Performance ◽  
Lead Zirconate ◽  
Microelectronic Devices ◽  
Active Layers ◽  
Zirconate Titanate

scholarly journals Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Iñigo Bretos ◽  
Ricardo Jiménez ◽  
Monika Tomczyk ◽  
Enrique Rodríguez-Castellón ◽  
Paula M. Vilarinho ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Flexible Electronics ◽  
High Performance ◽  
Lead Zirconate ◽  
Ferroelectric Materials ◽  
Cmos Process ◽  
Concept Design ◽  
Large Area ◽  
Microelectronic Devices ◽  
Zirconate Titanate

Abstract Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

High-Performance Micromachined Inductors Tunable by Lead Zirconate Titanate Actuators

2012 ◽  
Vol 33 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
Sarah S. Bedair ◽  
Jeffrey S. Pulskamp ◽  
Christopher D. Meyer ◽  
Manrico Mirabelli ◽  
Ronald G. Polcawich ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
High Performance ◽  
Lead Zirconate ◽  
Zirconate Titanate

Fabrication and testing of high performance acoustic emission sensor with Ta-Doped lead zirconate titanate

2015 ◽  
Vol 35 (1-4) ◽  
pp. 53-58 ◽  
Author(s):  
Dong-Hyung Kang ◽  
Kwang Lok Kim ◽  
Dong Gyu Yang ◽  
Young Hun Jeong ◽  
Chang-Il Kim ◽  
...  
Keyword(s):  
Acoustic Emission ◽  
Lead Zirconate Titanate ◽  
High Performance ◽  
Lead Zirconate ◽  
Acoustic Emission Sensor ◽  
Zirconate Titanate

High-performance piezoelectric nanogenerators based on chemically-reinforced composites

2018 ◽  
Vol 11 (6) ◽  
pp. 1425-1430 ◽  
Author(s):  
Eun Jung Lee ◽  
Tae Yun Kim ◽  
Sang-Woo Kim ◽  
Sunho Jeong ◽  
Youngmin Choi ◽  
...  
Keyword(s):  
Polymer Matrix ◽  
Lead Zirconate Titanate ◽  
High Performance ◽  
Lead Zirconate ◽  
Reinforced Composites ◽  
Amine Functionalized ◽  
Zirconate Titanate ◽  
Piezoelectric Nanogenerators

A high-performance piezoelectric nanocomposite generator (PNG) based on chemically reinforced composites is demonstrated by incorporating amine-functionalized lead zirconate titanate (PZT-NH2) nanoparticles into a polymer matrix.

Substrate-Free Thick-Film Lead Zirconate Titanate (PZT) Performance Measurement Using Berlincourt Method

2014 ◽  
Vol 895 ◽  
pp. 204-210 ◽  
Author(s):  
Swee Leong Kok ◽  
Kok Tee Lau ◽  
Qumrul Ahsan
Keyword(s):  
Thick Film ◽  
Lead Zirconate Titanate ◽  
Smart Materials ◽  
High Performance ◽  
Thick Films ◽  
Lead Zirconate ◽  
Dynamic Force ◽  
Sensors And Actuators ◽  
Zirconate Titanate ◽  
Piezoelectric Charge

Lead Zirconate Titanate or PZT is a high performance piezoelectric material which is able to generate charges when a proportional amount of stress is applied on the material. It has the potential to be used to fabricate micro-power generator for powering low power electronic devices, on top of already existence sensors and actuators. One of the indicators for comparing the performance of the smart materials is the piezoelectric charge coefficient, d33. In this paper, the actual d33 of PZT fabricated in the form of substrate-free thick-films were measured using Berlincourt Method whereby a standard dynamic force is applied to the materials and the resultant value of charges is recorded and compared over a period of time after the thick-films were polarized. The d33 values are compared between substrate-based and substrate-free specimens show a difference of about 45 % as a result of clamping effect contributed by d31. The experiment results also show that the thick-film PZT processed at 950 °C and polarized at 220 V with a thickness of about 120 μm has a piezoelectric charge coefficient of 82 pC/N.

Fabrication of High-Performance Lead Zirconate Titanate Actuators Using the Microwave and Hot-Press Hybrid Sintering Processes

2001 ◽  
Vol 40 (Part 1, No. 7) ◽  
pp. 4611-4614 ◽  
Author(s):  
Hirofumi Takahashi ◽  
Kazuaki Kato ◽  
Jinhao Qiu ◽  
Junji Tani ◽  
Kunihiro Nagata
Keyword(s):  
Lead Zirconate Titanate ◽  
High Performance ◽  
Lead Zirconate ◽  
Hot Press ◽  
Zirconate Titanate ◽  
Sintering Processes
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