scholarly journals Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Su Jin Lee ◽  
Yong-Jae Kim ◽  
So Young Yeo ◽  
Eunji Lee ◽  
Ho Sun Lim ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Polymer Blend ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Self Organization ◽  
Organic Field Effect Transistors ◽  
One Step

scholarly journals A Gated Four Probe Technique for Field Effect Measurements on Disordered Organic Semiconductors

2008 ◽  
Vol 63 (9) ◽  
pp. 591-595 ◽  
Author(s):  
Elizabeth von Hauff ◽  
Nicolas Spethmann ◽  
Jürgen Parisi
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Transport ◽  
Organic Field Effect Transistors ◽  
Transport Parameters ◽  
Electric Field Dependence ◽  
High Impedance ◽  
Current Voltage

A gated four probe measurement technique to isolate contact resistances in field effect measurementson disordered organic semiconductors was investigated. Organic field effect transistors (OFETs) were prepared with two additional electrodes in the contact geometry protruding into the source-drain channel to monitor the variation in potential across the channel. Two high impedance electrometers were used to determine the potential at the contacts. This technique allows to directly determine the magnitude of the parasitic contact resistances between metal contact and organic semiconductor from the drop in potential at the contact regions. The effects of contact resistances, which can falsify measurements on bulk transport parameters such as the field effect mobility, can be then eliminated during material characterization. Additionally, the temperature and electric field dependence of the contact resistances offers valuable information about the charge injection and extraction processes between metal and organic semiconductor. The effects of the four probe geometry, specifically the effect of the channel electrodes on the current-voltage characteristics, of hole transport in a polythiophene (P3HT) OFET with Au contacts were investigated and found not to influence device performance, except at currents « 1 nA. The IV characteristics were shown to follow the expected FET behaviour. From the variation in potential along the channel it was found that contact resistances at the source contact (charge injecting contact) are minimal while contact resistances at thedrain contact (charge extracting contact) are significant, resulting in a much lower effective sourcedrain voltage than that applied to the device.

Bar-Coated Ultrathin Semiconductors from Polymer Blend for One-Step Organic Field-Effect Transistors

2018 ◽  
Vol 10 (25) ◽  
pp. 21510-21517 ◽  
Author(s):  
Feng Ge ◽  
Zhen Liu ◽  
Seon Baek Lee ◽  
Xiaohong Wang ◽  
Guobing Zhang ◽  
...  
Keyword(s):  
Polymer Blend ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
One Step

scholarly journals Organic Semiconductor/Polymer Blend Films for Organic Field‐Effect Transistors

2019 ◽  
Vol 4 (9) ◽  
pp. 1900104 ◽  
Author(s):  
Sergi Riera‐Galindo ◽  
Francesca Leonardi ◽  
Raphael Pfattner ◽  
Marta Mas‐Torrent
Keyword(s):  
Polymer Blend ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Blend Films

scholarly journals Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1583 ◽  
Author(s):  
Damien Thuau ◽  
Katherine Begley ◽  
Rishat Dilmurat ◽  
Abduleziz Ablat ◽  
Guillaume Wantz ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Critical Thickness ◽  
Field Effect Transistors ◽  
Mechanical Strain ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
P Type

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.

Precise Patterning of Single Crystal Arrays of Organic Semiconductors by Patterned Microchannel Dip-coating Method for Organic Field-Effect Transistors

2021 ◽  
Author(s):  
Chaoqiang Wang ◽  
Zhengjun Lu ◽  
Wei Deng ◽  
Wanqin Zhao ◽  
Bei Lu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Dip Coating ◽  
Organic Field Effect Transistors ◽  
Coating Method ◽  
Dip Coating Method

Control over the growth location and orientation of organic semiconductor single crystals (OSSCs) is of key importance to enable high-performance organic circuits. However, the previous approaches are difficult to create...

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