scholarly journals Organic Semiconductor/Polymer Blend Films for Organic Field‐Effect Transistors

2019 ◽  
Vol 4 (9) ◽  
pp. 1900104 ◽  
Author(s):  
Sergi Riera‐Galindo ◽  
Francesca Leonardi ◽  
Raphael Pfattner ◽  
Marta Mas‐Torrent
Keyword(s):  
Polymer Blend ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Blend Films

AN ORGANIC FIELD EFFECT TRANSISTORS-BASED SENSING PLATFORM FOR ENVIRONMENTAL/SECURITY APPLICATIONS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 891-898 ◽  
Author(s):  
RAVISHANKAR S. DUDHE ◽  
HARSHIL N. RAVAL ◽  
ANIL KUMAR ◽  
V. RAMGOPAL RAO
Keyword(s):  
Radiation Dose ◽  
Ionizing Radiation ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Layer ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors ◽  
Γ Radiation ◽  
Semiconducting Material

Organic semiconducting material based sensors have been used for various environmental applications. Organic field effect transistors (OFETs) also find their applications in explosive vapor detection and total ionizing radiation dose determination. OFETs using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material and CuII tetraphenylporphyrin ( CuTPP ) composite as their active material were investigated as sensors for detection of various nitro-based explosive vapors with greater than parts per billion sensitivity range. Significant changes, suitable for sensor response, were observed in ON current (Ion) and transconductance (gm) extracted from electrical characteristics of the OFET after exposure to vapors of various explosive compounds. However, a similar device response was not observed to strong oxidizing agents such as benzoquinone (BQ) and benzophenone (BP). Also, the use of organic semiconducting material sensors for determining total ionizing radiation dose was studied, wherein the conductivity of the material was measured as a function of total ionizing radiation dose. An organic semiconducting material resistor was exposed to γ-radiation and it was observed that the change in resistance was proportional to the ionizing radiation dose. Changes in various parameters extracted from electrical characteristics of the OFET after γ-radiation exposure resulted in an improved sensitivity. To protect the organic semiconductor layer from the degradation in the ambient the sensors were passivated with a thin layer of silicon nitride.

scholarly journals Bipolar transport in organic field-effect transistors: organic semiconductor blends versus contact modification

2008 ◽  
Vol 10 (6) ◽  
pp. 065006 ◽  
Author(s):  
Andreas Opitz ◽  
Michael Kraus ◽  
Markus Bronner ◽  
Julia Wagner ◽  
Wolfgang Brütting
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals Nanoparticles of Cu2ZnSnS4as performance enhancing additives for organic field-effect transistors

2016 ◽  
Vol 4 (22) ◽  
pp. 5109-5115 ◽  
Author(s):  
Punarja Kevin ◽  
Mohammad Azad Malik ◽  
Paul O'Brien ◽  
Joseph Cameron ◽  
Rupert G. D. Taylor ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Performance Enhancing

An investigation on the addition of oleylamine coated Cu2ZnSnS4nanoparticles in organic semiconductor solutions to fabricate organic field-effect transistors (OFETs).

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