scholarly journals Large single crystal growth, transport property and spectroscopic characterizations of three-dimensional Dirac semimetal Cd3As2

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
R. Sankar ◽  
M. Neupane ◽  
S.-Y. Xu ◽  
C. J. Butler ◽  
I. Zeljkovic ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Transport Property ◽  
Three Dimensional ◽  
Single Crystal Growth ◽  
Large Single Crystal ◽  
Dirac Semimetal

Solid state single crystal growth of three-dimensional faceted LaFeAsO crystals

2018 ◽  
Vol 483 ◽  
pp. 9-15 ◽  
Author(s):  
Rhea Kappenberger ◽  
Saicharan Aswartham ◽  
Francesco Scaravaggi ◽  
Christian G.F. Blum ◽  
Mihai I. Sturza ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Solid State ◽  
Single Crystal ◽  
Three Dimensional ◽  
Single Crystal Growth

KDP single crystal growth via three-dimensional motion growth method

2016 ◽  
Vol 51 (8) ◽  
pp. 491-497 ◽  
Author(s):  
Huawei Yin ◽  
Mingwei Li ◽  
Chuan Zhou ◽  
Jie Song
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Three Dimensional ◽  
Single Crystal Growth ◽  
Growth Method

Large single-crystal growth and characterization of the narrow-gap semiconductor

1996 ◽  
Vol 11 (10) ◽  
pp. 1405-1410 ◽  
Author(s):  
M Özer ◽  
K M Paraskevopoulos ◽  
A N Anagnostopoulos ◽  
S Kokou ◽  
E K Polychroniadis
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Narrow Gap ◽  
Large Single Crystal

Large single-crystal growth of RBa2Cu3O7−x by the flux method (R=Y and rare earths)

1994 ◽  
Vol 16 (10-11) ◽  
pp. 1679-1683 ◽  
Author(s):  
E. Magnone ◽  
M. Ferretti ◽  
G. L. Olcese
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Rare Earths ◽  
Single Crystal Growth ◽  
Large Single Crystal ◽  
Flux Method ◽  
Method R

scholarly journals The crystal structure of Ho4Ni11In20

2012 ◽  
Vol 10 (2) ◽  
pp. 354-359 ◽  
Author(s):  
Yuriy Tyvanchuk ◽  
Volodymyr Svitlyk ◽  
Yaroslav Kalychak
Keyword(s):  
Crystal Structure ◽  
Crystal Growth ◽  
High Temperature ◽  
Single Crystal ◽  
Three Dimensional ◽  
Single Crystal Growth ◽  
X Ray ◽  
Arc Melting ◽  
Dimensional Network ◽  
Type C

AbstractThe polycrystalline Ho4Ni11In20 was obtained by arc-melting of the elements. The subsequent high temperature procedure was used for single crystal growth. Crystal structure of the compound was investigated by X-ray single crystal method: U4Ni11Ga20 type, C 2/m, a = 22.4528(17), b = 4.2947(3), c = 16.5587(13) Å, β = 124.591(5)°, R1 = 0.0276, wR2 = 0.0493 for 1989 independent reflections with [I>2σ(I)]. The structure is composed of three-dimensional network from Ni and In atoms in which Ho atoms fill distorted pentagonal channels.

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