KDP single crystal growth via three-dimensional motion growth method

2016 ◽  
Vol 51 (8) ◽  
pp. 491-497 ◽  
Author(s):  
Huawei Yin ◽  
Mingwei Li ◽  
Chuan Zhou ◽  
Jie Song
2018 ◽  
Vol 483 ◽  
pp. 9-15 ◽  
Author(s):  
Rhea Kappenberger ◽  
Saicharan Aswartham ◽  
Francesco Scaravaggi ◽  
Christian G.F. Blum ◽  
Mihai I. Sturza ◽  
...  

2006 ◽  
Vol 290 (2) ◽  
pp. 544-547 ◽  
Author(s):  
Wenhai Jiang ◽  
Xu Wang ◽  
Yuchun Chang ◽  
Shukun Yu ◽  
Chunyu Ma ◽  
...  

2012 ◽  
Vol 10 (2) ◽  
pp. 354-359 ◽  
Author(s):  
Yuriy Tyvanchuk ◽  
Volodymyr Svitlyk ◽  
Yaroslav Kalychak

AbstractThe polycrystalline Ho4Ni11In20 was obtained by arc-melting of the elements. The subsequent high temperature procedure was used for single crystal growth. Crystal structure of the compound was investigated by X-ray single crystal method: U4Ni11Ga20 type, C 2/m, a = 22.4528(17), b = 4.2947(3), c = 16.5587(13) Å, β = 124.591(5)°, R1 = 0.0276, wR2 = 0.0493 for 1989 independent reflections with [I>2σ(I)]. The structure is composed of three-dimensional network from Ni and In atoms in which Ho atoms fill distorted pentagonal channels.


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