scholarly journals Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Ren Liu ◽  
Xu-Chen You ◽  
Xue-Wen Fu ◽  
Fang Lin ◽  
Jie Meng ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Zno Nanowire

Investigation of electron beam detection properties of ZnO nanowire based back-to-back double Schottky diode

RSC Advances ◽  
2014 ◽  
Vol 4 (25) ◽  
pp. 12743 ◽  
Author(s):  
Xin Li ◽  
Junjie Qi ◽  
Qi Zhang ◽  
Zengze Wang ◽  
Shengnan Lu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Schottky Diode ◽  
Zno Nanowire

Electrical Contact Tunable Direct Printing Route for a ZnO Nanowire Schottky Diode

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3517-3523 ◽  
Author(s):  
Tae Il Lee ◽  
Won Jin Choi ◽  
Jyoti Prakash Kar ◽  
Youn Hee Kang ◽  
Joo Hee Jeon ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Electrical Contact ◽  
Zno Nanowire ◽  
Direct Printing

scholarly journals Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode

2016 ◽  
Vol 109 (19) ◽  
pp. 192101 ◽  
Author(s):  
Sunayna B. Bashar ◽  
Mohammad Suja ◽  
Wenhao Shi ◽  
Jianlin Liu
Keyword(s):  
Schottky Diode ◽  
Bragg Reflector ◽  
Random Lasing ◽  
Zno Nanowire ◽  
Distributed Bragg Reflector

Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode

2014 ◽  
Vol 16 (31) ◽  
pp. 16367 ◽  
Author(s):  
Seyed Hossein Hosseini Shokouh ◽  
Syed Raza Ali Raza ◽  
Hee Sung Lee ◽  
Seongil Im
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Classical Logic ◽  
Zno Nanowire

ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect

2010 ◽  
Vol 21 (11) ◽  
pp. 115205 ◽  
Author(s):  
Joondong Kim ◽  
Ju-Hyung Yun ◽  
Chang Hyun Kim ◽  
Yun Chang Park ◽  
Ju Yeon Woo ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Uv Detection ◽  
Zno Nanowire ◽  
Reduction Effect

Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation

Nano Letters ◽  
2011 ◽  
Vol 11 (10) ◽  
pp. 4246-4250 ◽  
Author(s):  
Boram Ryu ◽  
Young Tack Lee ◽  
Kwang H. Lee ◽  
Ryong Ha ◽  
Ji Hoon Park ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Zno Nanowire ◽  
One Dimensional

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

Structure and Optical Properties of ZnO Nanowire Arrays Grown by Plasma-assisted Molecular Beam Epitaxy

2012 ◽  
Vol 27 (3) ◽  
pp. 301-304 ◽  
Author(s):  
Zhi-Yuan ZHENG ◽  
Tie-Xin CHEN ◽  
Liang CAO ◽  
Yu-Yan HAN ◽  
Fa-Qiang XU
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays
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