scholarly journals Magnetic and transport properties of epitaxial thin film MgFe2O4 grown on MgO (100) by molecular beam epitaxy

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Han-Chun Wu ◽  
Ozhet Mauit ◽  
Cormac Ó Coileáin ◽  
Askar Syrlybekov ◽  
Abbas Khalid ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Molecular Beam ◽  
Epitaxial Thin Film

scholarly journals Magnetic and Electric Transport Properties of MnTe Thin Film Grown by Molecular Beam Epitaxy

2007 ◽  
Vol 17 (2) ◽  
pp. 81-85
Author(s):  
Woo-Chul Kim ◽  
Sung-Whan Bae ◽  
Sam-Jin Kim ◽  
Chul-Sung Kim ◽  
Kwang-Joo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Molecular Beam ◽  
Electric Transport

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Photoexcited carrier dynamics of thin film Cd3As2 grown on a GaAs(111)B substrate by molecular beam epitaxy

2021 ◽  
Vol 104 (9) ◽  
Author(s):  
Guihao Zhai ◽  
Jialin Ma ◽  
Hailong Wang ◽  
Jialiang Ye ◽  
Ting Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Dynamics ◽  
Photoexcited Carrier

scholarly journals Laser operation of Nd:LaF3 thin film grown by molecular beam epitaxy

1999 ◽  
Vol 35 (5) ◽  
pp. 398 ◽  
Author(s):  
E. Daran ◽  
D.P. Shepherd ◽  
T. Bhutta ◽  
C. Serrano
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Operation

Manifestation of the DX Centre in Heavily δ-Doped GaAs(Si)

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Arscott ◽  
M. Missous ◽  
L. Dobaczewski ◽  
P. C. Harness ◽  
D. K. Maude ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electron Concentration ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Wave Functions ◽  
Potential Well ◽  
Electronic Wave ◽  
Hall Measurements ◽  
Electronic Wave Functions

ABSTRACTShubnikov-de Haas and Hall measurements have been performed on singly delta doped GaAs(Si) structures, grown by molecular beam epitaxy, enabling us to study the effects of illumination and temperature upon bulk and individual subband, mobilities and carrier concentrations. In a highly doped sample, where the peak 3D electron concentration approaches 2×1019cm−3, we have observed novel changes in subband transport characteristics, not observed in the lower doped samples, which we attribute to the presence of DX centre phenomena. This paper explains the variations in individual subband transport properties due to a possible shift of the electronic wave functions contained in the potential well. This shift occurs due to a recombination-autoionization(R-A) process involving filled DX centres and free holes upon sample illumination at low temperatures.

Preparation of nano-structured InGaAs thin film by molecular beam epitaxy

2008 ◽  
Author(s):  
Yanping Yao ◽  
Chunling Liu ◽  
Zhongliang Qiao ◽  
Mei Li ◽  
Xin Gao ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam
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