scholarly journals Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation

2008 ◽  
Vol 8 (2) ◽  
pp. 109-114 ◽  
Author(s):  
A. J. Drew ◽  
J. Hoppler ◽  
L. Schulz ◽  
F. L. Pratt ◽  
P. Desai ◽  
...  
Keyword(s):  
Direct Measurement ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Muon Spin ◽  
Spin Valve ◽  
Spin Rotation ◽  
Low Energy ◽  
Muon Spin Rotation ◽  
Electronic Spin ◽  
Spin Diffusion Length

Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices

2021 ◽  
Vol 129 (1) ◽  
pp. 013901
Author(s):  
A. Yamada ◽  
M. Yamada ◽  
T. Shiihara ◽  
M. Ikawa ◽  
S. Yamada ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Experimental Estimation ◽  
Spin Diffusion Length

scholarly journals Measurement of the spatial extent of inverse proximity in a Py/Nb/Py superconducting trilayer using low-energy muon-spin rotation

2014 ◽  
Vol 89 (5) ◽  
Author(s):  
M. G. Flokstra ◽  
S. J. Ray ◽  
S. J. Lister ◽  
J. Aarts ◽  
H. Luetkens ◽  
...  
Keyword(s):  
Muon Spin ◽  
Spin Rotation ◽  
Low Energy ◽  
Muon Spin Rotation ◽  
Spatial Extent

scholarly journals Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO2/4H-SiC Interface

2020 ◽  
Vol 1004 ◽  
pp. 581-586
Author(s):  
Judith Woerle ◽  
Thomas Prokscha ◽  
Ulrike Grossner
Keyword(s):  
Depth Distribution ◽  
Muon Spin ◽  
Target Material ◽  
Spin Rotation ◽  
Low Energy ◽  
Muon Spin Rotation ◽  
Spatial Extension ◽  
Thermal Oxide ◽  
Induced Defects ◽  
Thermally Grown

In this work, the potential of muon spin rotation (μSR) with low-energy muons (LE-μ) for the investigation of oxidation-induced defects at the SiO2/4H-SiC interface is explored. By using implantation energies for the muons in the keV range and comparing the fractions of muonium in different regions, the depth distribution of defects in the first 200 nm of the target material can be resolved. Defect profiles of interfaces with either deposited or thermally grown SiO2 layers on 4H-SiC are compared. The results show an increased number of defects in the case of a thermal oxide, both on the oxide and on the SiC side of the interface, with a spatial extension of a few tens of nm.

Energy-Efficient Multiferroic Spin-Devices and Spin-Circuits

SPIN ◽  
2020 ◽  
Vol 10 (04) ◽  
pp. 2030001
Author(s):  
Kuntal Roy
Keyword(s):  
Energy Efficient ◽  
Large Scale ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Current ◽  
Logic Gates ◽  
Low Energy ◽  
Circuit Representation ◽  
Spin Diffusion Length ◽  
Spin Devices

Spin-devices are switched by flipping spins without moving charge in space and this can lead to ultra-low-energy switching replacing traditional transistors in beyond Moore’s law era. In particular, the electric field-induced magnetization switching has emerged to be an energy-efficient paradigm. Here, we review the recent developments on ultra-low-energy, area-efficient, and fast spin-devices using multiferroic magnetoelectric composites. It is shown that both digital logic gates and analog computing with transistor-like high-gain region in the input-output characteristics of multiferroic composites are feasible. We also review the equivalent spin-circuit representation of spin-devices by considering spin potential and spin current similar to the charge-based counterparts using Kirchhoff’s voltage/current laws, which is necessary for the development of large-scale circuits. We review the spin-circuit representation of spin pumping, which happens anyway when there is a material adjacent to a rotating magnetization and therefore it is particularly necessary to be incorporated in device modeling. Such representation is also useful for understanding and proposing experiments. In spin-circuit representation, spin diffusion length is an important parameter and it is shown that a thickness-dependent spin diffusion length reflecting Elliott–Yafet spin relaxation mechanism in platinum is necessary to match the experimental results.

Measurement of spin diffusion length in sputtered Ni films using a special exchange-biased spin valve geometry

2007 ◽  
Vol 90 (1) ◽  
pp. 012101 ◽  
Author(s):  
Charles E. Moreau ◽  
Ion C. Moraru ◽  
Norman O. Birge ◽  
William P. Pratt
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spin Diffusion Length

scholarly journals Magnetism, superconductivity, and coupling in cuprate heterostructures probed by low-energy muon-spin rotation

2012 ◽  
Vol 85 (2) ◽  
Author(s):  
B. M. Wojek ◽  
E. Morenzoni ◽  
D. G. Eshchenko ◽  
A. Suter ◽  
T. Prokscha ◽  
...  
Keyword(s):  
Muon Spin ◽  
Spin Rotation ◽  
Low Energy ◽  
Muon Spin Rotation

scholarly journals Depth-Dependent Spin Dynamics of Canonical Spin-Glass Films: A Low-Energy Muon-Spin-Rotation Study

2008 ◽  
Vol 100 (14) ◽  
Author(s):  
E. Morenzoni ◽  
H. Luetkens ◽  
T. Prokscha ◽  
A. Suter ◽  
S. Vongtragool ◽  
...  
Keyword(s):  
Spin Glass ◽  
Spin Dynamics ◽  
Muon Spin ◽  
Spin Rotation ◽  
Low Energy ◽  
Muon Spin Rotation ◽  
Rotation Study ◽  
Glass Films

Room-temperature spin transport in InAs nanowire lateral spin valve

RSC Advances ◽  
2016 ◽  
Vol 6 (79) ◽  
pp. 75736-75740 ◽  
Author(s):  
Zhicheng Wang ◽  
Dong Pan ◽  
Le Wang ◽  
Tingwen Wang ◽  
Bing Zhao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Transport ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spintronic Devices ◽  
Spin Diffusion Length ◽  
Nanowire Device ◽  
Large Spin

We report room temperature spin transport in an InAs nanowire device. A large spin signal of 35 kΩ and long spin diffusion length of 1.9 μm are achieved. We believe that these results open a practical way to design InAs NW based spintronic devices.

Spin diffusion length and giant magnetoresistance in spin-valve tri-layers

2000 ◽  
Vol 284-288 ◽  
pp. 1247-1248 ◽  
Author(s):  
Yoshiaki Hashimoto ◽  
Shingo Katsumoto ◽  
Chizuko Murayama ◽  
Yasuhiro Iye
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spin Diffusion Length
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