scholarly journals Selective etching of hexagonal boron nitride by high-pressure CF4 plasma for individual one-dimensional ohmic contacts to graphene layers

2020 ◽  
Vol 117 (24) ◽  
pp. 243101
Author(s):  
Yuta Seo ◽  
Satoru Masubuchi ◽  
Eisuke Watanabe ◽  
Momoko Onodera ◽  
Rai Moriya ◽  
...  
RSC Advances ◽  
2014 ◽  
Vol 4 (73) ◽  
pp. 38589-38593 ◽  
Author(s):  
N. Xu ◽  
J. F. Li ◽  
B. L. Huang ◽  
B. L. Wang

Two classes of structural families of boron nitride allotropes (named as X-BNs and L-BNs) are proposed to shed light on the polycrystalline structure of high pressure h-BN.


2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Jewook Park ◽  
Jaekwang Lee ◽  
Lei Liu ◽  
Kendal W. Clark ◽  
Corentin Durand ◽  
...  

2D Materials ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 034002
Author(s):  
Xuemei Li ◽  
Yuyang Long ◽  
Limin Ma ◽  
Jidong Li ◽  
Jun Yin ◽  
...  

2007 ◽  
Vol 551-552 ◽  
pp. 507-512
Author(s):  
F. Wang ◽  
Kai Feng Zhang ◽  
Wen Bo Han

Superplastic forming processing of ceramic materials at high temperatures and high pressure puts forward very high requests to moulds and lubricants, at which conditions seeking for appropriate lubricants is one of important preconditions in the superplastic forming of ceramic materials. Using ring compressive testing, lubricities of hexagonal boron nitride in superplastic compressive forming processing of 3Y-TZP/Al2O3 ceramic composite at elevated temperatures were investigated. Theoretical curves of friction factor were drawn according to upper bound method. Ring compressive tests were adopted at temperature of 1400 °C-1600 °C. The results indicate that when BN is used, friction factor is about 0.4, meanwhile friction factor don’t have great changes with higher temperature and increasing strain rate. X-ray diffraction shows that under high temperature and high pressure no boron nitride converts to cubic phase, which remains at room temperature.


2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Gwangwoo Kim ◽  
Kyung Yeol Ma ◽  
Minsu Park ◽  
Minsu Kim ◽  
Jonghyuk Jeon ◽  
...  

Abstract Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. However, to date, the possible emergence of physical properties and functionalities monitored by the interfaces between metallic graphene and insulating h-BN remains largely unexplored. Here, we demonstrate a blue emitting atomic-resolved heterojunction between graphene and h-BN. Such emission is tentatively attributed to localized energy states formed at the disordered boundaries of h-BN and graphene. The weak blue emission at the heterojunctions in simple in-plane heterostructures of h-BN and graphene can be enhanced by increasing the density of the interface in graphene quantum dots array embedded in the h-BN monolayer. This work suggests that the narrowest, atomically resolved heterojunctions of in-plane two-dimensional heterostructures provides a future playground for optoelectronics.


Nanoscale ◽  
2019 ◽  
Vol 11 (28) ◽  
pp. 13366-13376 ◽  
Author(s):  
Zhong-Qiang Liu ◽  
Jichen Dong ◽  
Feng Ding

In the initial stages of chemical vapor deposition on a Cu(111) surface, one-dimensional Bn–1Nn (N-rich environment) or BnNn–1 (B-rich) chains first appear, and they transform to two-dimensional sp2 networks or h-BN islands at a critical size of 13.


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