scholarly journals Hidden orbital polarization in diamond, silicon, germanium, gallium arsenide and layered materials

2017 ◽  
Vol 9 (5) ◽  
pp. e382-e382 ◽  
Author(s):  
Ji Hoon Ryoo ◽  
Cheol-Hwan Park
Keyword(s):  
Gallium Arsenide ◽  
Silicon Germanium ◽  
Layered Materials

Transformer balun design in Gallium Arsenide and Silicon Germanium processes

2018 ◽  
Author(s):  
Sudipta Chakraborty ◽  
Leigh E. Milner ◽  
Anthony Parker ◽  
Michael Heimlich
Keyword(s):  
Gallium Arsenide ◽  
Silicon Germanium

2D Silicon–Germanium-Layered Materials as Anodes for Li-Ion Batteries

2021 ◽  
Author(s):  
Xi Chen ◽  
Laura C. Loaiza ◽  
Laure Monconduit ◽  
Vincent Seznec
Keyword(s):  
Silicon Germanium ◽  
Layered Materials ◽  
Li Ion Batteries ◽  
Li Ion

Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon–germanium nanowires

2010 ◽  
Vol 108 (2) ◽  
pp. 024312 ◽  
Author(s):  
Hock-Chun Chin ◽  
Xiao Gong ◽  
Tien Khee Ng ◽  
Wan Khai Loke ◽  
Choun Pei Wong ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Silicon Germanium ◽  
Germanium Nanowires

scholarly journals Silicon-Germanium Dioxide and Aluminum Indium Gallium Arsenide-Based Acoustic Optic Modulators

2020 ◽  
Vol 10 (1) ◽  
pp. 506-511 ◽  
Author(s):  
Hazem M. El-Hageen ◽  
Aadel M. Alatwi ◽  
Ahmed Nabih Zaki Rashed
Keyword(s):  
Gallium Arsenide ◽  
Indium Gallium Arsenide ◽  
Silicon Germanium ◽  
High Performance ◽  
Germanium Dioxide ◽  
Error Rates ◽  
Previous Model ◽  
Time Response ◽  
Transient Time ◽  
Indium Gallium

AbstractThe purpose of this study was to clarify the silicon-germanium dioxide (SiGeO2) and Aluminum Indium Gallium Arsenide (AlInGaAs) based acoustic optic modulators for upgrading transmission performance characteristics. The transient time response of these modulators is analyzed and discussed in detail. The 3-dB modulation signal bandwidth, diffraction signal efficiency, signal rise time, and signal quality factor with minimum data error rates are also considered. The proposed models with silicon-germanium dioxide and Aluminum Indium Gallium Arsenide acoustic optic modulators were compared to the previous model with silicon acoustic optic modulators. The results confirmed the high-performance efficiency of the proposed models when compared to the previous model, in both the lowest transient time response and the highest acoustic optic modulators speed response.

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