A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide

1991 ◽  
Vol 53 (1) ◽  
pp. 47-53 ◽  
Author(s):  
M. Stutzmann ◽  
J.-B. Chevrier ◽  
C. P. Herrero ◽  
A. Breitschwerdt
Keyword(s):  
Gallium Arsenide ◽  
Silicon Germanium ◽  
Crystalline Silicon ◽  
Hydrogen Incorporation

High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates

1998 ◽  
Vol 45 (9) ◽  
pp. 2085-2088 ◽  
Author(s):  
Jyh-Jier Ho ◽  
Y.K. Fang ◽  
Kun-Hsien Wu ◽  
W.T. Hsieh ◽  
S.C. Huang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Speed ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Infrared Sensors ◽  
Amorphous Silicon Germanium

Transformer balun design in Gallium Arsenide and Silicon Germanium processes

2018 ◽  
Author(s):  
Sudipta Chakraborty ◽  
Leigh E. Milner ◽  
Anthony Parker ◽  
Michael Heimlich
Keyword(s):  
Gallium Arsenide ◽  
Silicon Germanium

Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon–germanium nanowires

2010 ◽  
Vol 108 (2) ◽  
pp. 024312 ◽  
Author(s):  
Hock-Chun Chin ◽  
Xiao Gong ◽  
Tien Khee Ng ◽  
Wan Khai Loke ◽  
Choun Pei Wong ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Silicon Germanium ◽  
Germanium Nanowires

Investigation of the Promotion Effect of Germane in Low Temperature Uhv-Cvd Silicon

1987 ◽  
Vol 102 ◽  
Author(s):  
Kevin J. Uram ◽  
Bernard S. Meyerson
Keyword(s):  
Low Temperature ◽  
Silicon Germanium ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Single Crystal Silicon ◽  
Gas Mixture ◽  
Crystal Silicon ◽  
Germanium Silicon ◽  
Kinetics Of ◽  
Silicon Germanium Alloys

ABSTRACTHigh quality, low defect density, single crystalline silicon/germanium alloys have been grown on Si(100) substrate wafers in a low temperature UHV-CVD reactor. Using a silane/germane gaseous source, the growth rate of the epitaxial layer increases from 4 angstroms/minute with no germane present to 82 angstroms/minute with 12.7% germane present in the reaction gas mixture at 550C. The germanium/silicon ratio in the deposited alloy is a factor of two greater than the germane/silane ratio in the reaction gas mixture. The kinetics of this effect are studied and correlation to UHV hydrogen thermal desorption from single crystal silicon-germanium alloys are made.

scholarly journals ANALYSIS OF SOLAR ENERGY POTENTIAL BY REMOTE SENSING TECHNIQUES IN VARAŽDINSKA COUNTY, CROATIA

2021 ◽  
Vol XLVI-4/W5-2021 ◽  
pp. 343-347
Author(s):  
N. Kranjčić ◽  
A. Bek ◽  
B. Đurin ◽  
S. K. Singh ◽  
S. Kanga
Keyword(s):  
Remote Sensing ◽  
Gallium Arsenide ◽  
Solar Energy ◽  
Energy Production ◽  
Crystalline Silicon ◽  
Multicriteria Analysis ◽  
The European Union ◽  
Solar Panels ◽  
Remotely Sensed Data ◽  
Energy Potential

Abstract. Renewable energy becomes more and more considered as energy production due to great benefits and less environmental impact then traditional energy sources. As a part of the European Union, Croatia agreed upon certain energy efficiency goal that need to be achieved during certain period. In this paper we analyse solar energy potential in northern part of Croatia, Varaždinska county. Remotely sensed data, CORINE land cover, digital elevation model, is used to perform multicriteria analysis. There are different solar panels considered: mono-crystalline silicon panels, poly-crystalline silicon panels, amorphous silicon panels, gallium arsenide panels and cadmium tellurium panels. Based on remote sensing data estimated yearly production of electric energy from solar potential could be from 8.40*107 to 2.43*1010 kWh depending on different slope of solar panels. Gallium arsenide panels shows best usability depending on slope estimated energy production is from 2.52*1010 to 7.30*1010 kW.

Micro-crystalline silicon-germanium thin films prepared by the multi-target RF sputtering system

2005 ◽  
Vol 862 ◽  
Author(s):  
Toru Ajiki ◽  
Isao Nakamura ◽  
Masao Isomura
Keyword(s):  
Crystallization Temperature ◽  
Silicon Germanium ◽  
Crystalline Silicon ◽  
Rf Sputtering ◽  
Dark Conductivity ◽  
Dangling Bond ◽  
Intrinsic Nature ◽  
Energy Gaps ◽  
Order Of Magnitude ◽  
Sputtering System

AbstractMicro-crystalline silicon-germanium (μc-SiGe) films were prepared by the multi-target RF sputtering system using Ar and Ar-H2 mixture gases. The crystallization temperature of Si0.3Ge0.7 films is reduced from 600 °C to 400 °C by the introduction of H2 into the sputtering gases. The dark conductivity of 1.7x10-7 S/cm and one order of magnitude of photosensitivity are obtained with the H2/Ar flow ratio of 2. The activation energy of dark conductivity is 0.42 eV, which is a half of the energy gaps of Si0.3Ge0.7, and show that the films have intrinsic nature. Besides, the absorption coefficients are similar to those of single crystalline Si0.3Ge0.7. The results suggest that the H2 introduction is effective both to reduce the dangling bond defects and to decrease the crystallization temperature of the μc-SiGe films.

Isolated Voids in Amorphous Silicon and Related Materials Measured by Effusion of Implanted Helium

2012 ◽  
Vol 1426 ◽  
pp. 341-346 ◽  
Author(s):  
W. Beyer ◽  
W. Hilgers ◽  
D. Lennartz ◽  
F. Pennartz ◽  
P. Prunici
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Vacuum Evaporation ◽  
Silicon Films ◽  
Preparation Process ◽  
Hydrogen Incorporation ◽  
Hydrogenated Amorphous ◽  
Deposition Techniques

ABSTRACTEffusion measurements of hydrogen and implanted helium are reported for (undoped) amorphous and crystalline Si:H and related materials. Effusion of helium observed at temperatures > 600°C is attributed to isolated voids present in the material from the preparation process. While rather high void densities are detected for amorphous silicon films prepared by such deposition techniques like vacuum evaporation or sputtering, much smaller densities are found for plasma grown hydrogenated amorphous silicon (a-Si:H). For device-grade a-Si:H, the density of cavities which can trap helium is estimated to be about 2x1018/cm3at most, suggesting that crystalline silicon type divacancies are not the major hydrogen incorporation site.

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