Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon–germanium nanowires

2010 ◽  
Vol 108 (2) ◽  
pp. 024312 ◽  
Author(s):  
Hock-Chun Chin ◽  
Xiao Gong ◽  
Tien Khee Ng ◽  
Wan Khai Loke ◽  
Choun Pei Wong ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Silicon Germanium ◽  
Germanium Nanowires

Tailoring thermal conductivity of silicon/germanium nanowires utilizing core-shell architecture

2016 ◽  
Vol 119 (15) ◽  
pp. 155101 ◽  
Author(s):  
S. Sarikurt ◽  
A. Ozden ◽  
A. Kandemir ◽  
C. Sevik ◽  
A. Kinaci ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Germanium ◽  
Core Shell ◽  
Germanium Nanowires

Transformer balun design in Gallium Arsenide and Silicon Germanium processes

2018 ◽  
Author(s):  
Sudipta Chakraborty ◽  
Leigh E. Milner ◽  
Anthony Parker ◽  
Michael Heimlich
Keyword(s):  
Gallium Arsenide ◽  
Silicon Germanium

Composition and Size Effects on the Optical Properties of Isolated Silicon-Germanium Nanowires

2012 ◽  
Vol 1408 ◽  
Author(s):  
Houssem Kallel ◽  
Abdallah Chehaidar ◽  
Arnaud Arbouet ◽  
Thierry Baron ◽  
Alexis Potié ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Germanium ◽  
Size Effects ◽  
Numerical Study ◽  
Mie Theory ◽  
Light Polarization ◽  
Angle Of Incidence ◽  
Nanowire Diameter ◽  
Germanium Nanowires ◽  
Silicon And Germanium

ABSTRACTSilicon and Germanium nanowires (NWs) have shown a strong ability to enhance both the absorption and scattering of light. Tailoring the optical properties of Si or Ge NWs can be obtained by adjusting the nanowire diameter. Another parameter that can be used is the chemical composition of silicon-germanium (Si1-xGex-NWs) alloys. In this work, we perform a numerical study on the optical properties of single Si1-xGex-NWs based on the Lorenz-Mie theory. The effects of Ge composition, light polarization and angle of incidence on the nanowire optical properties are investigated.

(Invited) Axial Silicon-Germanium Nanowires: Properties and Device Applications

2020 ◽  
Vol 98 (2) ◽  
pp. 13-28
Author(s):  
Leonid Tsybeskov ◽  
Theodore I Kamins ◽  
Xiaohua Wu ◽  
David J. Lockwood
Keyword(s):  
Silicon Germanium ◽  
Germanium Nanowires ◽  
Device Applications

The impact of erbium incorporation on the structure and photophysics of silicon–germanium nanowires

Nanoscale ◽  
2010 ◽  
Vol 2 (12) ◽  
pp. 2657 ◽  
Author(s):  
Ji Wu ◽  
Monika Wieligor ◽  
T. Waldek Zerda ◽  
Jeffery L. Coffer
Keyword(s):  
Silicon Germanium ◽  
Germanium Nanowires ◽  
The Impact

Silicon–Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications

2013 ◽  
Vol 114 (2) ◽  
pp. 1371-1412 ◽  
Author(s):  
Michele Amato ◽  
Maurizia Palummo ◽  
Riccardo Rurali ◽  
Stefano Ossicini
Keyword(s):  
Silicon Germanium ◽  
Basic Principles ◽  
Germanium Nanowires ◽  
Advanced Applications
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