scholarly journals Effects of Cross‐Sheet Density and Temperature Inhomogeneities on Magnetotail Reconnection

2019 ◽  
Vol 46 (1) ◽  
pp. 28-36 ◽  
Author(s):  
San Lu ◽  
A. V. Artemyev ◽  
V. Angelopoulos ◽  
P. L. Pritchett ◽  
A. Runov
Keyword(s):  
Magnetotail Reconnection ◽  
Sheet Density

Modulation-doped (AlGa)As/GaAs quantum well structure with high electron sheet density

1989 ◽  
Vol 25 (17) ◽  
pp. 1147
Author(s):  
A.L. Powell ◽  
J.S. Roberts ◽  
P.I. Rockett ◽  
T.J. Foster ◽  
L. Eaves
Keyword(s):  
Quantum Well ◽  
High Electron ◽  
Quantum Well Structure ◽  
Electron Sheet ◽  
Sheet Density

scholarly journals Evidence and theory for trapped electrons in guide field magnetotail reconnection

2008 ◽  
Vol 113 (A12) ◽  
pp. n/a-n/a ◽  
Author(s):  
J. Egedal ◽  
W. Fox ◽  
N. Katz ◽  
M. Porkolab ◽  
M. Øieroset ◽  
...  
Keyword(s):  
Trapped Electrons ◽  
Guide Field ◽  
Magnetotail Reconnection

scholarly journals Characteristics of Energetic Electrons Near Active Magnetotail Reconnection Sites: Statistical Evidence for Local Energization

2020 ◽  
Author(s):  
Ian J. Cohen ◽  
Drew L. Turner ◽  
Barry H. Mauk ◽  
Sam T. Bingham ◽  
J. Bern Blake ◽  
...  
Keyword(s):  
Statistical Evidence ◽  
Energetic Electrons ◽  
Magnetotail Reconnection

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

Acoustoelectric amplification of Rayleigh waves in low sheet density AlGaN/GaN heterostructures on sapphire

2019 ◽  
Vol 114 (6) ◽  
pp. 063502 ◽  
Author(s):  
Siddhartha Ghosh ◽  
Mark A. Hollis ◽  
Richard J. Molnar
Keyword(s):  
Rayleigh Waves ◽  
Sheet Density

Nonideal Electric Field Observed in the Separatrix Region of a Magnetotail Reconnection Event

2019 ◽  
Vol 46 (19) ◽  
pp. 10744-10753 ◽  
Author(s):  
Xiancai Yu ◽  
Rongsheng Wang ◽  
Quanming Lu ◽  
Christopher T. Russell ◽  
Shui Wang
Keyword(s):  
Electric Field ◽  
Magnetotail Reconnection
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