Role of Self-Assembled Monolayer Passivation in Electrical Transport Properties and Flicker Noise of Nanowire Transistors

ACS Nano ◽  
2012 ◽  
Vol 6 (8) ◽  
pp. 7352-7361 ◽  
Author(s):  
Seongmin Kim ◽  
Patrick D. Carpenter ◽  
Rand K. Jean ◽  
Haitian Chen ◽  
Chongwu Zhou ◽  
...  
2020 ◽  
Vol 7 (1) ◽  
pp. 252-262 ◽  
Author(s):  
Qinghua Zhao ◽  
Wei Wang ◽  
Felix Carrascoso-Plana ◽  
Wanqi Jie ◽  
Tao Wang ◽  
...  

Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials.


Nano Letters ◽  
2008 ◽  
Vol 8 (1) ◽  
pp. 49-55 ◽  
Author(s):  
Qingling Hang ◽  
Fudong Wang ◽  
Patrick D. Carpenter ◽  
Dmitri Zemlyanov ◽  
Dmitri Zakharov ◽  
...  

2004 ◽  
Vol 19 (7) ◽  
pp. 2003-2007 ◽  
Author(s):  
Karthik Shankar ◽  
Thomas N. Jackson

A study comparing the morphology and electrical transport properties of pentacene films on underlayers of different self-assembled monolayers (SAMs) is presented. The SAMs studied as underlayers were phenyltrichlorosilane, n-octadecyltrichlorosilane, and t-butyldiphenylchlorosilane. Pentacene thin films were grown by vacuum sublimation on SiO2 surfaces treated with self-assembled monolayers. During deposition, substrates were held at a temperature of 70 °C. The morphologies of the films at different stages of deposition were studied by atomic force microscopy, and the transport properties of the films were characterized by I-V measurements in a simple field-effect transistor (FET) structure. The SAM underlayers strongly influence the film morphology in the first few molecular layers and hence significantly impact the electrical transport in the resulting FETs.


2007 ◽  
Vol 121-123 ◽  
pp. 413-416
Author(s):  
Zhi Gang Li ◽  
Xin Wei Zhao ◽  
Shi Bing Long ◽  
Li Hui Zhang ◽  
Ming Liu

Long erbium disilicide nanowires were fabricated through laser ablation and annealing process on the Si (001) surface. The ErSi2 nanowires were along the perpendicular Si <110> directions. The average width of nanowires is less than 10nm and the maximum length is more then 10um. The electrical transport properties of the ErSi2 nanowires were measured and a resistivity value of 1.87×10-6Ωm was acquired. These self-assembled Si-based nanowires could be used for further devices applications.


2016 ◽  
Vol 8 (31) ◽  
pp. 20283-20291 ◽  
Author(s):  
Qing Su ◽  
Wenrui Zhang ◽  
Ping Lu ◽  
Shumin Fang ◽  
Fauzia Khatkhatay ◽  
...  

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