Self-Assembled Magnetic Metallic Nanopillars in Ceramic Matrix with Anisotropic Magnetic and Electrical Transport Properties

2016 ◽  
Vol 8 (31) ◽  
pp. 20283-20291 ◽  
Author(s):  
Qing Su ◽  
Wenrui Zhang ◽  
Ping Lu ◽  
Shumin Fang ◽  
Fauzia Khatkhatay ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Ceramic Matrix ◽  
Electrical Transport Properties ◽  
Self Assembled

Morphology and electrical transport in pentacene films on silylated oxide surfaces

2004 ◽  
Vol 19 (7) ◽  
pp. 2003-2007 ◽  
Author(s):  
Karthik Shankar ◽  
Thomas N. Jackson
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Self Assembled Monolayers ◽  
Electrical Transport Properties ◽  
Vacuum Sublimation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Molecular Layers

A study comparing the morphology and electrical transport properties of pentacene films on underlayers of different self-assembled monolayers (SAMs) is presented. The SAMs studied as underlayers were phenyltrichlorosilane, n-octadecyltrichlorosilane, and t-butyldiphenylchlorosilane. Pentacene thin films were grown by vacuum sublimation on SiO2 surfaces treated with self-assembled monolayers. During deposition, substrates were held at a temperature of 70 °C. The morphologies of the films at different stages of deposition were studied by atomic force microscopy, and the transport properties of the films were characterized by I-V measurements in a simple field-effect transistor (FET) structure. The SAM underlayers strongly influence the film morphology in the first few molecular layers and hence significantly impact the electrical transport in the resulting FETs.

Role of Self-Assembled Monolayer Passivation in Electrical Transport Properties and Flicker Noise of Nanowire Transistors

ACS Nano ◽  
2012 ◽  
Vol 6 (8) ◽  
pp. 7352-7361 ◽  
Author(s):  
Seongmin Kim ◽  
Patrick D. Carpenter ◽  
Rand K. Jean ◽  
Haitian Chen ◽  
Chongwu Zhou ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Flicker Noise ◽  
Electrical Transport Properties ◽  
Self Assembled Monolayer ◽  
Nanowire Transistors ◽  
Self Assembled

Electrical Transport Properties in Self-Assembled Erbium Disilicide Nanowires

2007 ◽  
Vol 121-123 ◽  
pp. 413-416
Author(s):  
Zhi Gang Li ◽  
Xin Wei Zhao ◽  
Shi Bing Long ◽  
Li Hui Zhang ◽  
Ming Liu
Keyword(s):  
Laser Ablation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Annealing Process ◽  
Maximum Length ◽  
Electrical Transport Properties ◽  
Average Width ◽  
Self Assembled

Long erbium disilicide nanowires were fabricated through laser ablation and annealing process on the Si (001) surface. The ErSi2 nanowires were along the perpendicular Si <110> directions. The average width of nanowires is less than 10nm and the maximum length is more then 10um. The electrical transport properties of the ErSi2 nanowires were measured and a resistivity value of 1.87×10-6Ωm was acquired. These self-assembled Si-based nanowires could be used for further devices applications.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

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