Raman Spectroscopy of Boron-Doped Single-Layer Graphene

ACS Nano ◽  
2012 ◽  
Vol 6 (7) ◽  
pp. 6293-6300 ◽  
Author(s):  
Yoong Ahm Kim ◽  
Kazunori Fujisawa ◽  
Hiroyuki Muramatsu ◽  
Takuya Hayashi ◽  
Morinobu Endo ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Boron Doped

Nanoscale mapping of intrinsic defects in single-layer graphene using tip-enhanced Raman spectroscopy

2016 ◽  
Vol 52 (53) ◽  
pp. 8227-8230 ◽  
Author(s):  
Weitao Su ◽  
Naresh Kumar ◽  
Ning Dai ◽  
Debdulal Roy
Keyword(s):  
Raman Spectroscopy ◽  
Spatial Resolution ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Intrinsic Defect ◽  
Intrinsic Defects ◽  
Layer Graphene ◽  
Tip Enhanced Raman Spectroscopy ◽  
20 Nm

Non-gap TERS with a contrast of 8.5 enables TERS mapping of graphene's intrinsic defect with a spatial resolution of 20 nm.

Curvature analysis of single layer graphene on the basis of extreme low-frequency Raman spectroscopy

2019 ◽  
Vol 114 (16) ◽  
pp. 161907
Author(s):  
Y. Shen ◽  
E. Dai ◽  
X. Liu ◽  
W. Pan ◽  
H. Yang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Frequency ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Curvature Analysis

A Raman spectroscopy signature for characterizing defective single-layer graphene: Defect-induced I(D)/I(D′) intensity ratio by theoretical analysis

Carbon ◽  
2015 ◽  
Vol 90 ◽  
pp. 53-62 ◽  
Author(s):  
Jie Jiang ◽  
Ruth Pachter ◽  
Faisal Mehmood ◽  
Ahmad E. Islam ◽  
Benji Maruyama ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Theoretical Analysis ◽  
Intensity Ratio ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

Conformation Transition of Single-Layer Graphene and Its Raman Spectroscopy

2010 ◽  
Vol 10 (11) ◽  
pp. 7481-7484 ◽  
Author(s):  
Caiyu Qiu ◽  
Haiqing Zhou ◽  
Minjiang Chen ◽  
Zheng Liu ◽  
Lianfeng Sun
Keyword(s):  
Raman Spectroscopy ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Conformation Transition

scholarly journals Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 565-568 ◽  
Author(s):  
Rositza Yakimova ◽  
Chariya Virojanadara ◽  
Daniela Gogova ◽  
Mikael Syväjärvi ◽  
D. Siche ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Atmospheric Pressure ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Single Layer Graphene ◽  
Theoretical Studies ◽  
Large Area ◽  
Layer Graphene ◽  
Spatial Uniformity ◽  
Formation Conditions

We are aiming at understanding the graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the ultimate goal to fabricate large area graphene (up to 2 inch) with controlled number of monolayers and spatial uniformity. To reach the objectives we are using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial graphene is characterized by ARPES, LEEM and Raman spectroscopy. Theoretical studies are employed to get better insight of graphene patterns and stability. Reproducible results of single layer graphene on the Si-face of 6H and 4H-SiC polytypes have been attained. It is demonstrated that thickness uniformity of graphene is very sensitive to the substrate miscut.

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