Electronic properties of boron doped single-layer graphene

2018 ◽  
Author(s):  
Roman S. Tikhonov ◽  
Egor P. Sharin
Keyword(s):  
Electronic Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Boron Doped

Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

2018 ◽  
Vol 123 (16) ◽  
pp. 161533 ◽  
Author(s):  
Sunil Kumar ◽  
Ashish Kumar ◽  
Ambuj Tripathi ◽  
Chetna Tyagi ◽  
D. K. Avasthi
Keyword(s):  
Electronic Properties ◽  
Ion Irradiation ◽  
Single Layer ◽  
Heavy Ion ◽  
Single Layer Graphene ◽  
Swift Heavy Ion Irradiation ◽  
Layer Graphene ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion

Cerium-induced changes in the π-band of graphene

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114219-114223 ◽  
Author(s):  
Jingul Kim ◽  
Paengro Lee ◽  
Mintae Ryu ◽  
Heemin Park ◽  
Jinwook Chung
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Temperature Dependent ◽  
Layer Graphene ◽  
Structural And Electronic Properties ◽  
Induced Changes

By doping magnetic Ce atoms on a single layer graphene, we report a new and efficient means of modifying structural and electronic properties of graphene that opens a temperature-dependent band gap of size up to 0.5 eV.

scholarly journals Investigation of electronic properties of chemical vapor deposition grown single layer graphene via doping of thin transparent conductive films

RSC Advances ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 3096-3103
Author(s):  
Anand Kumar Singh ◽  
Vivek Chaudhary ◽  
Arun Kumar Singh ◽  
S. R. P. Sinha
Keyword(s):  
Chemical Vapor Deposition ◽  
Charge Carrier ◽  
Electronic Properties ◽  
Vapor Deposition ◽  
Optoelectronic Devices ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Conductive Films ◽  
Layer Graphene

The tuning of charge carrier of graphene is a potential step for the realization of multifunctional use in current electronic/optoelectronic devices.

Raman Spectroscopy of Boron-Doped Single-Layer Graphene

ACS Nano ◽  
2012 ◽  
Vol 6 (7) ◽  
pp. 6293-6300 ◽  
Author(s):  
Yoong Ahm Kim ◽  
Kazunori Fujisawa ◽  
Hiroyuki Muramatsu ◽  
Takuya Hayashi ◽  
Morinobu Endo ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Boron Doped

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

scholarly journals Millisecond lattice gasification for high-density CO2- and O2-sieving nanopores in single-layer graphene

2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  
Keyword(s):  
Single Layer ◽  
High Density ◽  
Single Layer Graphene ◽  
Pore Density ◽  
Vacancy Defects ◽  
Carbon Gasification ◽  
Layer Graphene ◽  
Gas Molecules ◽  
Good Agreement

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.

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