Curvature analysis of single layer graphene on the basis of extreme low-frequency Raman spectroscopy

2019 ◽  
Vol 114 (16) ◽  
pp. 161907
Author(s):  
Y. Shen ◽  
E. Dai ◽  
X. Liu ◽  
W. Pan ◽  
H. Yang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Frequency ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Curvature Analysis

Nanoscale mapping of intrinsic defects in single-layer graphene using tip-enhanced Raman spectroscopy

2016 ◽  
Vol 52 (53) ◽  
pp. 8227-8230 ◽  
Author(s):  
Weitao Su ◽  
Naresh Kumar ◽  
Ning Dai ◽  
Debdulal Roy
Keyword(s):  
Raman Spectroscopy ◽  
Spatial Resolution ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Intrinsic Defect ◽  
Intrinsic Defects ◽  
Layer Graphene ◽  
Tip Enhanced Raman Spectroscopy ◽  
20 Nm

Non-gap TERS with a contrast of 8.5 enables TERS mapping of graphene's intrinsic defect with a spatial resolution of 20 nm.

NONLINEAR RESPONSE INDUCED STRONG ABSORPTANCE OF GRAPHENE IN THE TERAHERTZ REGIME

2010 ◽  
Vol 24 (21) ◽  
pp. 2243-2249 ◽  
Author(s):  
X. G. XU ◽  
J. C. CAO
Keyword(s):  
Nonlinear Optical ◽  
Low Frequency ◽  
Single Layer ◽  
Optical Response ◽  
Optoelectronic Device ◽  
Nonlinear Optical Response ◽  
Single Layer Graphene ◽  
Dirac Fermions ◽  
Layer Graphene ◽  
Fifth Order

We have calculated the fifth-order nonlinear optical response at experimentally relevant field strengths within the model of massless Dirac fermions by coupling the massless Dirac fermions to the time-dependent electric field quantum mechanically. It demonstrates that the fifth-order nonlinear optical response plays an important role in the contribution to the optical conductivity of pristine single-layer graphene in the low frequency part of the terahertz regime. The nonlinear effect can enhance the optical activity of single-layer graphene in the terahertz regime and significantly decreases the transmittance of graphene in the regime of frequencies from 0.1 to 0.5 THz. These properties of graphene may be used for photonic and optoelectronic device in the terahertz regime.

scholarly journals Low-Frequency Noise Parameter Extraction Method for Single-Layer Graphene FETs

2020 ◽  
Vol 67 (5) ◽  
pp. 2093-2099
Author(s):  
Nikolaos Mavredakis ◽  
Wei Wei ◽  
Emiliano Pallecchi ◽  
Dominique Vignaud ◽  
Henri Happy ◽  
...  
Keyword(s):  
Extraction Method ◽  
Low Frequency ◽  
Single Layer ◽  
Parameter Extraction ◽  
Single Layer Graphene ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Parameter ◽  
Layer Graphene

A Raman spectroscopy signature for characterizing defective single-layer graphene: Defect-induced I(D)/I(D′) intensity ratio by theoretical analysis

Carbon ◽  
2015 ◽  
Vol 90 ◽  
pp. 53-62 ◽  
Author(s):  
Jie Jiang ◽  
Ruth Pachter ◽  
Faisal Mehmood ◽  
Ahmad E. Islam ◽  
Benji Maruyama ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Theoretical Analysis ◽  
Intensity Ratio ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

Conformation Transition of Single-Layer Graphene and Its Raman Spectroscopy

2010 ◽  
Vol 10 (11) ◽  
pp. 7481-7484 ◽  
Author(s):  
Caiyu Qiu ◽  
Haiqing Zhou ◽  
Minjiang Chen ◽  
Zheng Liu ◽  
Lianfeng Sun
Keyword(s):  
Raman Spectroscopy ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Conformation Transition

scholarly journals Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 565-568 ◽  
Author(s):  
Rositza Yakimova ◽  
Chariya Virojanadara ◽  
Daniela Gogova ◽  
Mikael Syväjärvi ◽  
D. Siche ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Atmospheric Pressure ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Single Layer Graphene ◽  
Theoretical Studies ◽  
Large Area ◽  
Layer Graphene ◽  
Spatial Uniformity ◽  
Formation Conditions

We are aiming at understanding the graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the ultimate goal to fabricate large area graphene (up to 2 inch) with controlled number of monolayers and spatial uniformity. To reach the objectives we are using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial graphene is characterized by ARPES, LEEM and Raman spectroscopy. Theoretical studies are employed to get better insight of graphene patterns and stability. Reproducible results of single layer graphene on the Si-face of 6H and 4H-SiC polytypes have been attained. It is demonstrated that thickness uniformity of graphene is very sensitive to the substrate miscut.

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