Passivation of Metal Surface States: Microscopic Origin for Uniform Monolayer Graphene by Low Temperature Chemical Vapor Deposition

ACS Nano ◽  
2011 ◽  
Vol 5 (3) ◽  
pp. 1915-1920 ◽  
Author(s):  
Insu Jeon ◽  
Heejun Yang ◽  
Sung-Hoon Lee ◽  
Jinseong Heo ◽  
David H. Seo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Metal Surface ◽  
Vapor Deposition ◽  
Surface States ◽  
Chemical Vapor ◽  
Monolayer Graphene ◽  
Microscopic Origin

Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition

2012 ◽  
Vol 100 (2) ◽  
pp. 021601 ◽  
Author(s):  
Rafik Addou ◽  
Arjun Dahal ◽  
Peter Sutter ◽  
Matthias Batzill
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Monolayer Graphene ◽  
Graphene Growth

scholarly journals Plasma-Enhanced Chemical Vapor Deposition of Acetylene on Codeposited Bimetal Catalysts Increasing Graphene Sheet Continuity Under Low-Temperature Growth Conditions

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Joshua Tracy ◽  
Otto Zietz ◽  
Samuel Olson ◽  
Jun Jiao
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Monolayer Graphene ◽  
Au Catalyst ◽  
Temperature Growth ◽  
Low Temperature Growth

Abstract Here, we report a novel method for low-temperature synthesis of monolayer graphene at 450 °C on a polycrystalline bimetal Ni-Au catalyst. In this study, low-temperature chemical vapor deposition synthesis of graphene was performed at 450 °C on codeposited Ni-Au which shows successful monolayer graphene formation without an extra annealing process. The experimental results suggest that electron beam codeposition of bimetal catalyst is the key procedure that enables the elimination of the pre-growth high-temperature annealing of the catalyst prior to graphene synthesis, an indispensable process, used in previous reports. The formation was further improved by plasma-assisted growth in which the inductively coupled plasma ionizes the carbon precursors that interact with codeposited Ni-Au catalyst of 50 nm in thickness at 450 °C. These combined growth conditions drastically increase the graphene’s sheet uniformity and area connectivity from 11.6% to 99%. These fabrication parameters enable the graphene formation that shifts from a bulk diffusion-based growth model towards a surface based reaction. The technique reported here opens the opportunity for the low-temperature growth of graphene for potential use in future CMOS applications.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

Low Temperature Chemical Vapor Deposition of Hafnium Nitride−Boron Nitride Nanocomposite Films

2009 ◽  
Vol 21 (23) ◽  
pp. 5601-5606 ◽  
Author(s):  
Navneet Kumar ◽  
Wontae Noh ◽  
Scott R. Daly ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocomposite Films ◽  
Hafnium Nitride

Incorporation of oxygen and chlorine atoms into low‐temperature (850 °C) silicon epitaxial films by chemical vapor deposition

1995 ◽  
Vol 66 (21) ◽  
pp. 2867-2869 ◽  
Author(s):  
Akihiro Miyauchi ◽  
Kazuhiro Ueda ◽  
Yousuke Inoue ◽  
Takaya Suzuki ◽  
Yoshinori Imai
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Chlorine Atoms
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