scholarly journals Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

Nano Letters ◽  
2009 ◽  
Vol 9 (8) ◽  
pp. 2873-2876 ◽  
Author(s):  
Joshua A. Robinson ◽  
Maxwell Wetherington ◽  
Joseph L. Tedesco ◽  
Paul M. Campbell ◽  
Xiaojun Weng ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
High Mobility ◽  
Epitaxial Graphene ◽  
Wafer Scale ◽  
Spectral Signatures ◽  
Raman Spectral

Observation of the integer quantum Hall effect in high quality, uniform wafer-scale epitaxial graphene films

2010 ◽  
Vol 97 (25) ◽  
pp. 252101 ◽  
Author(s):  
Wei Pan ◽  
Stephen W. Howell ◽  
Anthony Joseph Ross ◽  
Taisuke Ohta ◽  
Thomas A. Friedmann
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Epitaxial Graphene ◽  
High Quality ◽  
Wafer Scale ◽  
Integer Quantum Hall Effect ◽  
Graphene Films ◽  
Integer Quantum

scholarly journals Half integer quantum Hall effect in high mobility single layer epitaxial graphene

2009 ◽  
Vol 95 (22) ◽  
pp. 223108 ◽  
Author(s):  
Xiaosong Wu ◽  
Yike Hu ◽  
Ming Ruan ◽  
Nerasoa K Madiomanana ◽  
John Hankinson ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
High Mobility ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

Wafer-scale epitaxial graphene on SiC for sensing applications

2015 ◽  
Author(s):  
Mikael Karlsson ◽  
Qin Wang ◽  
Yichen Zhao ◽  
Wei Zhao ◽  
Muhammet S. Toprak ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Wafer Scale ◽  
Sensing Applications

Nanoscale Heat Conduction in the SOI, Strained-Si and Tri-Gate Transistors

2004 ◽  
Author(s):  
Mehdi Asheghi
Keyword(s):  
Carrier Mobility ◽  
High Mobility ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
Device Performance ◽  
Strained Si ◽  
Insulator Layer ◽  
Junction Capacitance ◽  
Induced Changes ◽  
Soi Technology

There have been many attempts in the recent years to improve the device performance by enhancing carrier mobility by using the strained-induced changes in silicon electronic bands [1–4] or reducing the junction capacitance in silicon-on-insulator (SOI) technology. Strained silicon on insulator (SSOI) is another promising technology, which is expected to show even higher performance, in terms of speed and power consumption, comparing to the regular strained-Si transistors. In this technology, the strained silicon is incorporated in the silicon on insulator (SOI) technology such that the strained-Si introduces high mobility for electrons and holes and the insulator layer (usually SiO2) exhibits low junction capacitance due to its small dielectric constant [5, 6]. In these devices a layer of SiGe may exist between the strined-Si layer and insulator (strained Si-on-SiGe-on-insulator, SGOI) [6] or the strained-Si layer can be directly on top of the insulator [7]. Latter is advantageous for eliminating some of the key problems associated with the fabrication of SGOI.

High mobility in α-phosphorene isostructures with low deformation potential

2020 ◽  
Vol 22 (4) ◽  
pp. 2276-2282 ◽  
Author(s):  
Ruhao Fang ◽  
Xiangyuan Cui ◽  
Catherine Stampfl ◽  
Simon P. Ringer ◽  
Rongkun Zheng
Keyword(s):  
Carrier Mobility ◽  
High Mobility ◽  
Deformation Potential ◽  
High Carrier Mobility ◽  
High Carrier

The exceptionally low deformation potential is proposed as the key determinant for the high carrier mobility in ten possible α-phosphorene isostructures.

scholarly journals Deterministic patterned growth of high-mobility large-crystal graphene: a path towards wafer scale integration

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 021004 ◽  
Author(s):  
Vaidotas Miseikis ◽  
Federica Bianco ◽  
Jérémy David ◽  
Mauro Gemmi ◽  
Vittorio Pellegrini ◽  
...  
Keyword(s):  
High Mobility ◽  
Large Crystal ◽  
Wafer Scale ◽  
Patterned Growth ◽  
Wafer Scale Integration ◽  
Scale Integration
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