Wafer-scale epitaxial graphene on SiC for sensing applications

2015 ◽  
Author(s):  
Mikael Karlsson ◽  
Qin Wang ◽  
Yichen Zhao ◽  
Wei Zhao ◽  
Muhammet S. Toprak ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Wafer Scale ◽  
Sensing Applications

Observation of the integer quantum Hall effect in high quality, uniform wafer-scale epitaxial graphene films

2010 ◽  
Vol 97 (25) ◽  
pp. 252101 ◽  
Author(s):  
Wei Pan ◽  
Stephen W. Howell ◽  
Anthony Joseph Ross ◽  
Taisuke Ohta ◽  
Thomas A. Friedmann
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Epitaxial Graphene ◽  
High Quality ◽  
Wafer Scale ◽  
Integer Quantum Hall Effect ◽  
Graphene Films ◽  
Integer Quantum

Graphene Nano-Biosensors for Detection of Cancer Risk

2012 ◽  
Vol 711 ◽  
pp. 246-252 ◽  
Author(s):  
Owen J. Guy ◽  
Gregory Burwell ◽  
Zari Tehrani ◽  
Ambroise Castaing ◽  
Kelly Ann Walker ◽  
...  
Keyword(s):  
High Vacuum ◽  
Epitaxial Graphene ◽  
Electrical Signal ◽  
Early Detection Of Disease ◽  
Disease Biomarkers ◽  
Sensing Applications ◽  
Highly Sensitive ◽  
Surface Functionalisation ◽  
Graphene Devices ◽  
Modified Graphene

Biosensor diagnostics based on bio-functionalized semiconductor devices are an important development in ultrasensitive sensors for early detection of disease biomarkers. Electrochemical devices using chemically modified graphene (CMG) channels are excellent candidates for nanobiosensors. This paper presents the development of novel antibody functionalized epitaxial graphene devices for bio-sensing applications. Epitaxial graphene has been grown on silicon carbide (SiC) substrates under high vacuum and high temperature conditions (1200 – 1700°C). A generic electrochemical surface functionalisation chemistry, which can be used to attach a variety of “bio-receptors” to graphitic surfaces, has been developed. The attached bio-receptors are capable of specific and selective interaction with disease biomarkers. When a target biomarker molecule interacts with the “bio-receptor” functionalized surface, the charge density at that surface is affected. This change can be detected as an electrical signal from the biosensor, enabling highly sensitive (nM) detection of biomarker analytes. This paper reports the fabrication of graphene channel sensors for detection of disease biomarkers.

Highly Transparent Wafer-Scale Synthesis of Crystalline WS2 Nanoparticle Thin Film for Photodetector and Humidity-Sensing Applications

2016 ◽  
Vol 8 (5) ◽  
pp. 3359-3365 ◽  
Author(s):  
Amit S. Pawbake ◽  
Ravindra G. Waykar ◽  
Dattatray J. Late ◽  
Sandesh R. Jadkar
Keyword(s):  
Thin Film ◽  
Humidity Sensing ◽  
Wafer Scale ◽  
Sensing Applications

Dry Techniques for Epitaxial Graphene Transfer

2010 ◽  
Vol 1259 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Glenn G. Jernigan ◽  
James C. Culbertson ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Wafer Scale ◽  
Thermal Release ◽  
Graphene Films ◽  
Graphene Transfer ◽  
Van Der Pauw

AbstractEpitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.

Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 633-636 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
James C. Culbertson ◽  
Glenn G. Jernigan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Wafer Scale ◽  
Transfer Processes ◽  
Thermal Release ◽  
Graphene Films ◽  
High Carrier ◽  
The Impact

Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit high carrier mobilities, in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. We will report on the impact that these transfer processes has upon the electrical properties of the transferred EG films.

scholarly journals Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Omid Habibpour ◽  
Zhongxia Simon He ◽  
Wlodek Strupinski ◽  
Niklas Rorsman ◽  
Herbert Zirath
Keyword(s):  
Integrated Circuits ◽  
Millimeter Wave ◽  
Epitaxial Graphene ◽  
Data Rate ◽  
High Data Rate ◽  
Wafer Scale ◽  
High Data ◽  
Millimeter Wave Integrated Circuits

Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC

Carbon ◽  
2015 ◽  
Vol 87 ◽  
pp. 409-414 ◽  
Author(s):  
Tom Yager ◽  
Arseniy Lartsev ◽  
Rositsa Yakimova ◽  
Samuel Lara-Avila ◽  
Sergey Kubatkin
Keyword(s):  
Transport Properties ◽  
Epitaxial Graphene ◽  
Wafer Scale

Advancing quasi-freestanding epitaxial graphene electronics through integration of wafer scale hexagonal boron nitride dielectrics

2012 ◽  
Author(s):  
Michael S. Bresnehan ◽  
Matthew J. Hollander ◽  
Rebecca L. Marucci ◽  
Michael LaBella ◽  
Kathleen A. Trumbull ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Epitaxial Graphene ◽  
Wafer Scale
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