Defect-Free Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium

Nano Letters ◽  
2012 ◽  
Vol 12 (11) ◽  
pp. 5744-5749 ◽  
Author(s):  
Hongyi Xu ◽  
Yong Wang ◽  
Yanan Guo ◽  
Zhiming Liao ◽  
Qiang Gao ◽  
...  
Keyword(s):  
Zinc Blende ◽  
Inas Nanowires

Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨001̅⟩ InAs Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (2) ◽  
pp. 876-882 ◽  
Author(s):  
Zhi Zhang ◽  
Kun Zheng ◽  
Zhen-Yu Lu ◽  
Ping-Ping Chen ◽  
Wei Lu ◽  
...  
Keyword(s):  
Zinc Blende ◽  
Free Zinc ◽  
Inas Nanowires

scholarly journals Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: Realistic calculations with multiband k·p method

2018 ◽  
Vol 97 (24) ◽  
Author(s):  
Tiago Campos ◽  
Paulo E. Faria Junior ◽  
Martin Gmitra ◽  
Guilherme M. Sipahi ◽  
Jaroslav Fabian
Keyword(s):  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Coupling Effects ◽  
Zinc Blende ◽  
Inas Nanowires

Selective GaSb radial growth on crystal phase engineered InAs nanowires

Nanoscale ◽  
2015 ◽  
Vol 7 (23) ◽  
pp. 10472-10481 ◽  
Author(s):  
Luna Namazi ◽  
Malin Nilsson ◽  
Sebastian Lehmann ◽  
Claes Thelander ◽  
Kimberly A. Dick
Keyword(s):  
Vapor Phase ◽  
Radial Growth ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Crystal Phase ◽  
Organic Vapor ◽  
Zinc Blende ◽  
Metal Organic ◽  
Inas Nanowires

In this work we have developed InAs nanowire templates, with designed zinc blende and wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic vapor phase epitaxy.

Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires

2018 ◽  
Vol 97 (11) ◽  
Author(s):  
J. Becker ◽  
S. Morkötter ◽  
J. Treu ◽  
M. Sonner ◽  
M. Speckbacher ◽  
...  
Keyword(s):  
Carrier Trapping ◽  
Zinc Blende ◽  
Short Period ◽  
Inas Nanowires

scholarly journals Photoluminescence Characteristics of Zinc Blende InAs Nanowires

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
E. A. Anyebe ◽  
M. Kesaria
Keyword(s):  
Surface Defects ◽  
Complementary Metal Oxide Semiconductor ◽  
Band Gap Energy ◽  
Oxide Semiconductor ◽  
Wurtzite Phase ◽  
Zinc Blende ◽  
Dominant Band ◽  
Spectral Linewidth ◽  
Inas Nanowires ◽  
Distinct Temperature

AbstractA detailed understanding of the optical properties of self-catalysed (SC), zinc blende (ZB) dominant, nanowires (NWs) is crucial for the development of functional and impurity-free nanodevices. Despite the fact that SC InAs NWs mostly crystallize in the WZ/ZB phase, there are very limited reports on the photoluminescence (PL) properties of ZB InAs NWs. Here, we report on the PL properties of Molecular Beam Epitaxy grown, SC InAs NWs. The as-grown NWs exhibit a dominant band to band (BtB) peak associated with ZB, InAs with an emission energy of ~0.41 eV in good agreement with the band gap energy of ZB InAs and significantly lower than that of the wurtzite phase (~0.48 eV). The strong BtB peak persists to near room temperature with a distinct temperature-dependent red-shift and very narrow spectral linewidth of ~20 meV (10 K) which is much smaller than previously reported values. A narrowing in PL linewidth with increasing NWs diameter is correlated with a decline in the influence of surface defects resulting from an enlargement in NWs diameter. This study demonstrates the high optical property of SC InAs NWs which is compatible with the Si-complementary metal-oxide-semiconductor technology and paves the way for the monolithic integration of InAs NWs with Si in novel nanodevices.

Wurtzite/Zinc-Blende ‘K’-shape InAs Nanowires with Embedded Two-Dimensional Wurtzite Plates

Nano Letters ◽  
2016 ◽  
Vol 17 (1) ◽  
pp. 531-537 ◽  
Author(s):  
Jung-Hyun Kang ◽  
Marta Galicka ◽  
Perla Kacman ◽  
Hadas Shtrikman
Keyword(s):  
Two Dimensional ◽  
Zinc Blende ◽  
Inas Nanowires

Kinetic Engineering of Wurtzite and Zinc-Blende AlSb Shells on InAs Nanowires

Nano Letters ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 5775-5781 ◽  
Author(s):  
Hanna Kindlund ◽  
Reza R. Zamani ◽  
Axel R. Persson ◽  
Sebastian Lehmann ◽  
L. Reine Wallenberg ◽  
...  
Keyword(s):  
Zinc Blende ◽  
Inas Nanowires

Diameter Dependence of the Wurtzite−Zinc Blende Transition in InAs Nanowires

2010 ◽  
Vol 114 (9) ◽  
pp. 3837-3842 ◽  
Author(s):  
J. Johansson ◽  
K. A. Dick ◽  
P. Caroff ◽  
M. E. Messing ◽  
J. Bolinsson ◽  
...  
Keyword(s):  
Zinc Blende ◽  
Inas Nanowires

Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires

Nano Letters ◽  
2013 ◽  
Vol 13 (12) ◽  
pp. 6023-6027 ◽  
Author(s):  
He Zheng ◽  
Jian Wang ◽  
Jian Yu Huang ◽  
Jianbo Wang ◽  
Ze Zhang ◽  
...  
Keyword(s):  
Phase Transition ◽  
Dynamic Process ◽  
Zinc Blende ◽  
Inas Nanowires ◽  
Zinc Blende Structure

Palladium Catalyzed Defect-free Zinc-Blende Structured InAs Nanowires

2013 ◽  
Vol 1551 ◽  
pp. 95-99
Author(s):  
Hongyi Xu ◽  
Qiang Gao ◽  
H. Hoe Tan ◽  
Chennupati Jagadish ◽  
Jin Zou
Keyword(s):  
Chemical Characterization ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Organic Chemical ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Vapor Liquid Solid Mechanism ◽  
Palladium Catalyzed ◽  
Metal Organic ◽  
Inas Nanowires

ABSTRACTIn this study, Pd thin film is used as catalyst to grow epitaxial InAs nanowires on GaAs(111)B substrate in a metal-organic chemical vapor deposition reactor to explore the growth mechanism and the effects of non-gold catalysts in the growth of III-V epitaxial nanowires. Through detailed morphological, structural and chemical characterization using scanning and transmission electron microscopy, it is found that defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four {111} sidewall facets forming a diamond shaped cross-section. Furthermore, the interface between the nanowire/catalyst is found to be the uncommon {113} planes. It is anticipated that these zinc-blende structured InAs nanowires are grown via the vapor-liquid-solid mechanism. The defect-free nature of these nanowires arises from the non-<111> growth direction and non-{111} nanowire/catalyst interface.

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