Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires

Nano Letters ◽  
2013 ◽  
Vol 13 (12) ◽  
pp. 6023-6027 ◽  
Author(s):  
He Zheng ◽  
Jian Wang ◽  
Jian Yu Huang ◽  
Jianbo Wang ◽  
Ze Zhang ◽  
...  
Keyword(s):  
Phase Transition ◽  
Dynamic Process ◽  
Zinc Blende ◽  
Inas Nanowires ◽  
Zinc Blende Structure

A phase transition in Ga2Se3 under high pressure

1994 ◽  
Vol 72 (9-10) ◽  
pp. 681-682 ◽  
Author(s):  
K. V. Savchenko ◽  
V. V. Shchennikov
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Thermoelectric Power ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Vickers Microhardness ◽  
Zinc Blende ◽  
Stockbarger Method ◽  
Zinc Blende Structure ◽  
Semiconductor Type

Ga2Se3 crystals with an excess of Se were grown by the Bridgman–Stockbarger method and had a defect zinc blende structure with a0 = 5.42 Å [Formula: see text] (1 Å = 10−10 m). At room temperature the resistivity was equal to (4.5 ± 1.5) × 1011 Ω cm, the thermoelectric power was (−1.1 ± 0.1) mV K−1 and the Vickers microhardness was (357 ± 9) kg mm−2. The gamma-induced conductivity was measured in the gamma-emitting power range of 3–340 rad s−1. Pressure dependencies of electrical resistance and thermoelectric power at room temperature allowed us to determine a phase transition of the semiconductor–semiconductor type at 14.2 GPa.

Ba2Na(CN2)(CN)3, ein neues Cyanamid-cyanid mit interpenetrierenden Teilstrukturen / Ba2Na(CN2)(CN)3, a Novel Cyanamide Cyanide with Interpenetrating Substructures

1996 ◽  
Vol 51 (1) ◽  
pp. 1-8 ◽  
Author(s):  
Ute Berger ◽  
Wolfgang Schnick
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Structure Type ◽  
Temperature Phase ◽  
X Ray ◽  
Zinc Blende ◽  
Reversible Phase Transition ◽  
Reversible Phase ◽  
Low Temperature Phase ◽  
Zinc Blende Structure

Abstract Ba2Na(CN2)(CN)3 was obtained by the reaction of Ba2N with melamine and NaCN at 700 °C. The compound was structurally characterized by single-crystal X-ray investigations (Fd3̄m, a = 1518.8(3) pm, Z = 16). In the crystal structure the Ba2+ ions form a cubic close packed arrangement, the Na+ and the CN2-2 ions occupy the octahedral interstices. The CN-ions are located within the close packed Ba2+ layers. The unit cell of Ba2Na(CN2)(CN)3 contains two interpenetrating substructures of the zinc-blende structure type, building up a variant of NaTl. A reversible phase transition has been observed during cooling of the compound. Whereas the Ba2(CN2)(CN)3 sublattice remains nearly unaffected in this process, the Na+ ions of the low-temperature phase are statistically distributed on two crystallographic positions.

Phase Transition and Phonon Spectrum of Zinc-Blende Structure ZnX ( X = S, Se, Te)

2010 ◽  
Vol 53 (6) ◽  
pp. 1160-1166 ◽  
Author(s):  
Tan Jia-Jin ◽  
Ji Guang-Fu ◽  
Chen Xiang-Rong ◽  
Gou Qing-Quan
Keyword(s):  
Phase Transition ◽  
Phonon Spectrum ◽  
Zinc Blende ◽  
Zinc Blende Structure

Sputter Deposition of Fe-Co Nitride for Ferromagnetic Granular Nitride Thin Film

2009 ◽  
Vol 631-632 ◽  
pp. 327-331 ◽  
Author(s):  
K. Sakon ◽  
Y. Hirokawa ◽  
Yasuji Masubuchi ◽  
Shinichi Kikkawa
Keyword(s):  
Thin Film ◽  
Solid Solution ◽  
Thermal Decomposition ◽  
Sputter Deposition ◽  
Composite Target ◽  
Zinc Blende ◽  
Alloy Particles ◽  
Sputter Deposited ◽  
Magneto Resistance ◽  
Zinc Blende Structure

Sputter deposited Fe0.7Co0.3 nitride thin film had zinc blende structure. It was thermally decomposed completely back to the ferromagnetic Fe0.7Co0.3 alloy above 400°C. As-deposited nitride thin films obtained in cosputtering of (Fe0.7Co0.3)1-xAlx composite target with nitrogen sputter gas were solid solutions with zinc blende (x≤0.44) and wurtzite (x>0.5) type structure, respectively. The largest magneto resistance ratio of 0.24% was observed on the Fe0.7Co0.3 alloy particles dispersed in AlN thin film obtained by thermal decomposition of the nitride solid solution with x=0.66 at 500°C.

Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨001̅⟩ InAs Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (2) ◽  
pp. 876-882 ◽  
Author(s):  
Zhi Zhang ◽  
Kun Zheng ◽  
Zhen-Yu Lu ◽  
Ping-Ping Chen ◽  
Wei Lu ◽  
...  
Keyword(s):  
Zinc Blende ◽  
Free Zinc ◽  
Inas Nanowires
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