Selective GaSb radial growth on crystal phase engineered InAs nanowires

Nanoscale ◽  
2015 ◽  
Vol 7 (23) ◽  
pp. 10472-10481 ◽  
Author(s):  
Luna Namazi ◽  
Malin Nilsson ◽  
Sebastian Lehmann ◽  
Claes Thelander ◽  
Kimberly A. Dick
Keyword(s):  
Vapor Phase ◽  
Radial Growth ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Crystal Phase ◽  
Organic Vapor ◽  
Zinc Blende ◽  
Metal Organic ◽  
Inas Nanowires

In this work we have developed InAs nanowire templates, with designed zinc blende and wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic vapor phase epitaxy.

InAs Nanowires Grown by Metal–Organic Vapor-Phase Epitaxy (MOVPE) Employing PS/PMMA Diblock Copolymer Nanopatterning

Nano Letters ◽  
2013 ◽  
Vol 13 (12) ◽  
pp. 5979-5984 ◽  
Author(s):  
Yinggang Huang ◽  
Tae Wan Kim ◽  
Shisheng Xiong ◽  
Luke J. Mawst ◽  
Thomas F. Kuech ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Diblock Copolymer ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Inas Nanowires

High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires

Nano Research ◽  
2012 ◽  
Vol 5 (7) ◽  
pp. 470-476 ◽  
Author(s):  
Sebastian Lehmann ◽  
Daniel Jacobsson ◽  
Knut Deppert ◽  
Kimberly A. Dick
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Organic Vapor ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Metal Organic

Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy

2009 ◽  
Vol 6 (S2) ◽  
pp. S510-S513 ◽  
Author(s):  
W. H. Goh ◽  
J. Martin ◽  
S. Ould-Saad ◽  
S. Gautier ◽  
A. A. Sirenko ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Organic Vapor ◽  
Metal Organic

Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy

ACS Nano ◽  
2018 ◽  
Vol 12 (10) ◽  
pp. 10374-10382 ◽  
Author(s):  
Inseok Yang ◽  
Xu Zhang ◽  
Changlin Zheng ◽  
Qian Gao ◽  
Ziyuan Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Radial Growth ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic ◽  
Multi Quantum Well ◽  
Growth Evolution

Selective Growth of GaN Rods on the Apex of GaN Pyramids by Metal Organic Vapor Phase Epitaxy

2013 ◽  
Vol 52 (1S) ◽  
pp. 01AF02
Author(s):  
Wy Il Yun ◽  
Hyo Jong Lee ◽  
Kee Sam Shin ◽  
Jung Sik Park ◽  
Young Moon Yu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Organic Vapor ◽  
Metal Organic

Maskless selective growth of semi-polar (112¯2) GaN on Si (311) substrate by metal organic vapor phase epitaxy

2009 ◽  
Vol 311 (10) ◽  
pp. 2914-2918 ◽  
Author(s):  
Min Yang ◽  
Hyung Soo Ahn ◽  
Tomoyuki Tanikawa ◽  
Yoshio Honda ◽  
Masahito Yamaguchi ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Organic Vapor ◽  
Metal Organic ◽  
Gan On Si

Bottom-Up Formation of Vertical Free-Standing Semiconductor Nanowires Hybridized with Ferromagnetic Nanoclusters

2014 ◽  
Vol 783-786 ◽  
pp. 1990-1995 ◽  
Author(s):  
Shinjiro Hara
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Free Standing ◽  
Bottom Up ◽  
Semiconductor Nanowire ◽  
Organic Vapor ◽  
Selective Area ◽  
Gaas Nanowires ◽  
Metal Organic ◽  
Inas Nanowires

The author introduces and summarizes the results on bottom-up formation and structural characterizations obtained so far for the MnAs nanoclusters and MnAs/semiconductor nanowire hybrids. First, MnAs nanoclusters were grown by selective-area metal-organic vapor phase epitaxy. They had a hexagonal NiAs-type crystal structure. Their <00(0)1> direction was parallel to <111>B direction of zinc-blende-type GaAs substrates. Hybrid MnAs/GaAs nanowires, subsequently, were fabricated by combining selective-area metal-organic vapor phase epitaxy of GaAs nanowire templates and endotaxial MnAs nanoclustering on them. MnAs nanoclusters ordered at six ridges of hexagonal GaAs nanowires were formed possibly owing to more atomic steps between {0-11} crystal facets. In the case of hybrid MnA/InAs nanowires, MnAs nanoclusters were not formed only on the {0-11} side-walls, and/or ridges between them, but on the top {111}B crystal facets of hexagonal InAs nanowires. MnAs nanoclusters were formed much deeper into the InAs nanowires than into the GaAs nanowires. These facts are possibly due to the InAs nanowires are thermally less stable than the GaAs nanowires. Some of the hybrid MnA/InAs nanowires were bent at the parts where the MnAs nanoclusters were grown into the host nanowires mainly owing to the strain effects.

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