scholarly journals Current Saturation and Voltage Gain in Bilayer Graphene Field Effect Transistors

Nano Letters ◽  
2012 ◽  
Vol 12 (3) ◽  
pp. 1324-1328 ◽  
Author(s):  
B. N. Szafranek ◽  
G. Fiori ◽  
D. Schall ◽  
D. Neumaier ◽  
H. Kurz
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Bilayer Graphene ◽  
Voltage Gain ◽  
Current Saturation

Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2

ACS Nano ◽  
2014 ◽  
Vol 9 (1) ◽  
pp. 363-370 ◽  
Author(s):  
Chris M. Corbet ◽  
Connor McClellan ◽  
Amritesh Rai ◽  
Sushant Sudam Sonde ◽  
Emanuel Tutuc ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Voltage Gain ◽  
Current Saturation

scholarly journals Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Seung Min Song ◽  
Jae Hoon Bong ◽  
Wan Sik Hwang ◽  
Byung Jin Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Maximum Output ◽  
Voltage Gain ◽  
Output Resistance ◽  
Current Saturation ◽  
Rf Applications ◽  
Graphene Devices ◽  
High Output

Abstract Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high output resistance is therefore a crucial step for graphene to be utilized in RF applications. In the present study, we report high output resistances and voltage gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare silicon as a supporting substrate without an insulating layer under the graphene. The GoSFETs exhibit a maximum output resistance of 2.5 MΩ∙μm, maximum intrinsic voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new route to overcome the limitations of conventional graphene-on-insulator (GoI) FETs and subsequently brings graphene electronics closer to practical usage.

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

Threshold voltage roll-off modelling of bilayer graphene field-effect transistors

2013 ◽  
Vol 28 (12) ◽  
pp. 125020 ◽  
Author(s):  
M Saeidmanesh ◽  
Razali Ismail ◽  
M Khaledian ◽  
H Karimi ◽  
E Akbari
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Bilayer Graphene
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