scholarly journals Semiconducting properties of perchlorate-doped graphene using an electrochemical method

RSC Advances ◽  
2017 ◽  
Vol 7 (27) ◽  
pp. 16823-16825 ◽  
Author(s):  
Chang-Soo Park ◽  
Dongil Chu ◽  
Yoon Shon ◽  
Eun Kyu Kim
Keyword(s):  
Band Gap ◽  
Electrochemical Method ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Semiconducting Properties ◽  
Gap Opening ◽  
Doped Graphene ◽  
P Type

We report a band gap opening and p-type doping for single layer graphene by an electrochemical method.

Energy gap opening by crossing drop cast single-layer graphene nanoribbons

2018 ◽  
Vol 29 (31) ◽  
pp. 315705 ◽  
Author(s):  
Toyo Kazu Yamada ◽  
Hideto Fukuda ◽  
Taizo Fujiwara ◽  
Polin Liu ◽  
Kohji Nakamura ◽  
...  
Keyword(s):  
Energy Gap ◽  
Graphene Nanoribbons ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Gap Opening

scholarly journals Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Nano Letters ◽  
2011 ◽  
Vol 11 (10) ◽  
pp. 4047-4051 ◽  
Author(s):  
Hang Zhang ◽  
Elena Bekyarova ◽  
Jhao-Wun Huang ◽  
Zeng Zhao ◽  
Wenzhong Bao ◽  
...  
Keyword(s):  
Band Gap ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Band Gap Engineering ◽  
Layer Graphene ◽  
Graphene Devices

Cerium-induced changes in the π-band of graphene

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114219-114223 ◽  
Author(s):  
Jingul Kim ◽  
Paengro Lee ◽  
Mintae Ryu ◽  
Heemin Park ◽  
Jinwook Chung
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Temperature Dependent ◽  
Layer Graphene ◽  
Structural And Electronic Properties ◽  
Induced Changes

By doping magnetic Ce atoms on a single layer graphene, we report a new and efficient means of modifying structural and electronic properties of graphene that opens a temperature-dependent band gap of size up to 0.5 eV.

Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection

2012 ◽  
Vol 717-720 ◽  
pp. 687-690
Author(s):  
Ruth Pearce ◽  
R. Yakimova ◽  
L. Hultman ◽  
Jens Eriksson ◽  
Mike Andersson ◽  
...  
Keyword(s):  
Work Function ◽  
Elevated Temperatures ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Steady Increase ◽  
Fermi Level Pinning ◽  
Layer Graphene ◽  
Highly Sensitive ◽  
Grown Graphene ◽  
P Type

Epitaxially grown single layer graphene on silicon carbide (SiC) resistive sensors were characterised for NO2 response at room and elevated temperatures, with an n-p type transition observed with increasing NO2 concentrations for all sensors. The concentration of NO2 required to cause this transition varied with different graphene samples and is attributed to varying degrees of substrate induced Fermi-level pinning above the Dirac point. The work function of a single layer device demonstrated a steady increase in work function with increasing NO2 concentration indicating no change in reaction mechanism in the concentration range measured despite a change in sensor response direction. Epitaxially grown graphene device preparation is challenging due to poor adhesion of the graphene layer to the substrate. A field effect transistor (FET) device is presented which does not require wire bonding to contacts on graphene.

scholarly journals High-performance deformable photoswitches with p-doped graphene as the top window electrode

2015 ◽  
Vol 3 (1) ◽  
pp. 37-40 ◽  
Author(s):  
Rongjin Li ◽  
Zhaoyang Liu ◽  
Khaled Parvez ◽  
Xinliang Feng ◽  
Klaus Müllen
Keyword(s):  
High Performance ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Doped Graphene

Deformable polymer photoswitches with p-doped single layer graphene as the top window electrode exhibit an on/off ratio as high as 8.5 × 105.

scholarly journals Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

2012 ◽  
Vol 4 (2) ◽  
pp. e6-e6 ◽  
Author(s):  
Ruge Quhe ◽  
Jiaxin Zheng ◽  
Guangfu Luo ◽  
Qihang Liu ◽  
Rui Qin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Hexagonal Boron Nitride ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

Large and tunable thermoelectric effect in single layer graphene on bilayer graphene

2015 ◽  
Vol 29 (03) ◽  
pp. 1550003 ◽  
Author(s):  
Z. Z. Alisultanov
Keyword(s):  
Simple Model ◽  
Band Gap ◽  
Single Layer ◽  
Bilayer Graphene ◽  
Single Layer Graphene ◽  
Monolayer Graphene ◽  
Thermoelectric Effect ◽  
Layer Graphene ◽  
Trilayer Graphene

The conductivity and thermopower of a trilayer graphene based system have been studied within the framework of a simple model. It has been shown that kinks of the conductivity and peaks of the thermopower of the monolayer graphene formed on a tunable bilayer graphene appear near the edges of the band gap of the tunable bilayer graphene.

scholarly journals Erratum: Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

2012 ◽  
Vol 4 (4) ◽  
pp. e16-e16 ◽  
Author(s):  
Ruge Quhe ◽  
Jiaxin Zheng ◽  
Guangfu Luo ◽  
Qihang Liu ◽  
Rui Qin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Hexagonal Boron Nitride ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

High Performance of Low Band Gap Polymer-Based Ambipolar Transistor Using Single-Layer Graphene Electrodes

2015 ◽  
Vol 7 (10) ◽  
pp. 6002-6012 ◽  
Author(s):  
Jong Yong Choi ◽  
Woonggi Kang ◽  
Boseok Kang ◽  
Wonsuk Cha ◽  
Seon Kyoung Son ◽  
...  
Keyword(s):  
Band Gap ◽  
High Performance ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Low Band Gap ◽  
Layer Graphene ◽  
Low Band Gap Polymer
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