Rational Synthesis of p-Type Zinc Oxide Nanowire Arrays Using Simple Chemical Vapor Deposition

Nano Letters ◽  
2007 ◽  
Vol 7 (2) ◽  
pp. 323-328 ◽  
Author(s):  
Bin Xiang ◽  
Pengwei Wang ◽  
Xingzheng Zhang ◽  
Shadi. A. Dayeh ◽  
David P. R. Aplin ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanowire Arrays ◽  
Simple Chemical ◽  
Zinc Oxide Nanowire ◽  
P Type

Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition

1997 ◽  
Vol 36 (Part 2, No. 11A) ◽  
pp. L1453-L1455 ◽  
Author(s):  
Kazunori Minegishi ◽  
Yasushi Koiwai ◽  
Yukinobu Kikuchi ◽  
Koji Yano ◽  
Masanobu Kasuga ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Zinc Oxide Films ◽  
P Type

Synthesis of greenish phosphorus on carbon substrate

2021 ◽  
Author(s):  
Haipeng Wang ◽  
Cheng Liu ◽  
HuiLi Wang ◽  
Xinpeng Han ◽  
Shaojie Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Formation Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Carbon Substrate ◽  
Deposition Method ◽  
Critical Factors ◽  
Simple Chemical

One of the phosphorus allotropes called greenish phosphorus was successfully synthesized by simple chemical vapor deposition method. We revealed that the critical factors in the formation mechanism of greenish phosphorus...

TRANSPORT PROPERTIES OF CrO2 (100) FILM GROWN ON TiO2 BY A SIMPLE ATMOSPHERE PRESSURE CHEMICAL VAPOR DEPOSITION

2014 ◽  
Vol 21 (04) ◽  
pp. 1450055
Author(s):  
LIANG XIE ◽  
JIN ZHI ZHANG ◽  
NAI YI CUI ◽  
HONG GUANG ZHANG
Keyword(s):  
Chemical Vapor Deposition ◽  
Temperature Dependence ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Residual Resistivity ◽  
Low Field ◽  
Oriented Film ◽  
Critical Wavelength ◽  
Simple Chemical ◽  
Pressure Chemical

Epitaxial CrO 2 (100)-oriented film was successfully fabricated on TiO 2 (100) substrate by a simple chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO 3 precursor. The transport measurements show that the CrO 2 film is metallic with a small residual resistivity 4 μΩ cm down to 0.6 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T) = ρ0 + AT2 exp (-Δ/T) over the range of 0.6–300 K with Δ = 123.6 K. The magnetization of the film becomes saturated in a relatively low field with a small coercive field. The temperature dependence of magnetization shows Bloch's T3/2 law and the slope of the curve suggests a critical wavelength of λΔ ~ 26.6 Å beyond which spin-flip scattering becomes important.

Volatile, Monomeric, and Fluorine-Free Precursors for the Metal Organic Chemical Vapor Deposition of Zinc Oxide

2010 ◽  
Vol 2010 (9) ◽  
pp. 1366-1372 ◽  
Author(s):  
Daniela Bekermann ◽  
Detlef Rogalla ◽  
Hans-Werner Becker ◽  
Manuela Winter ◽  
Roland A. Fischer ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Temperature-Induced Structure and Morphological Transformation in SnS Prepared by a Chemical Vapor Deposition Method

2014 ◽  
Vol 513-517 ◽  
pp. 286-290 ◽  
Author(s):  
Ren Fu Zhuo ◽  
Yi Nong Wang ◽  
De Yan ◽  
Xiao Yong Xu ◽  
Zhi Guo Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Morphological Transformation ◽  
Simple Chemical ◽  
Different Temperatures ◽  
Sns Thin Films ◽  
Induced Structure ◽  
Made In

SnS thin films were deposited at different temperatures on silicon and quartz plates through directly elementary reaction via a simple chemical vapor deposition (CVD) process. The as-prepared products have a transformation of morphology from plate-like to granule-like when the temperature increased. A mechanism involving two competitive factors, surface energy and binding energy, was proposed to understand their growth. The products prepared at low temperature were single crystal while the films made in high temperature are polycrystal, the optical band gap (1.2~2.1ev) and the Sn:S atom ratios increases as the deposited temperature increases.

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