Synthesis of Nearly Monodisperse Embedded Nanoparticles by Separating Nucleation and Growth in Ion Implantation

Nano Letters ◽  
2005 ◽  
Vol 5 (2) ◽  
pp. 373-377 ◽  
Author(s):  
Vidya Ramaswamy ◽  
Tony E. Haynes ◽  
C. Woody White ◽  
Warren J. MoberlyChan ◽  
Sjoerd Roorda ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Nucleation And Growth ◽  
Embedded Nanoparticles

scholarly journals Investigating Helium Bubble Nucleation and Growth through Simultaneous In-Situ Cryogenic, Ion Implantation, and Environmental Transmission Electron Microscopy

Materials ◽  
2019 ◽  
Vol 12 (16) ◽  
pp. 2618 ◽  
Author(s):  
Caitlin A. Taylor ◽  
Samuel Briggs ◽  
Graeme Greaves ◽  
Anthony Monterrosa ◽  
Emily Aradi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Nucleation And Growth ◽  
Bubble Nucleation ◽  
Face Centered Cubic ◽  
Helium Bubble ◽  
Palladium Hydride ◽  
Transmission Electron

Palladium can readily dissociate molecular hydrogen at its surface, and rapidly accept it onto the octahedral sites of its face-centered cubic crystal structure. This can include radioactive tritium. As tritium β-decays with a half-life of 12.3 years, He-3 is generated in the metal lattice, causing significant degradation of the material. Helium bubble evolution at high concentrations can result in blister formation or exfoliation and must therefore be well understood to predict the longevity of materials that absorb tritium. A hydrogen over-pressure must be applied to palladium hydride to prevent hydrogen from desorbing from the metal, making it difficult to study tritium in palladium by methods that involve vacuum, such as electron microscopy. Recent improvements in in-situ ion implantation Transmission Electron Microscopy (TEM) allow for the direct observation of He bubble nucleation and growth in materials. In this work, we present results from preliminary experiments using the new ion implantation Environmental TEM (ETEM) at the University of Huddersfield to observe He bubble nucleation and growth, in-situ, in palladium at cryogenic temperatures in a hydrogen environment. After the initial nucleation phase, bubble diameter remained constant throughout the implantation, but bubble density increased with implantation time. β-phase palladium hydride was not observed to form during the experiments, likely indicating that the cryogenic implantation temperature played a dominating role in the bubble nucleation and growth behavior.

In situTEM observation of nucleation and growth of spherical graphitic clusters under ion implantation

2002 ◽  
Vol 51 (suppl 1) ◽  
pp. S183-S187 ◽  
Author(s):  
Hiroaki Abe ◽  
Shunya Yamamoto ◽  
Atsumi Miyashita
Keyword(s):  
Ion Implantation ◽  
Nucleation And Growth

Ebic Analysis of Gettering at Si-Si (Ge) Heteroepitaxial Misfit Dislocations as a Function of Impurity Decoration

1992 ◽  
Vol 262 ◽  
Author(s):  
H. R. Kirk ◽  
Z. J. Radzimski ◽  
E. A. Fitzgerald ◽  
G. A. Rozgonyi
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Electrical Activity ◽  
Nucleation And Growth ◽  
Metallic Thin Films ◽  
Misfit Dislocations ◽  
Type Condition ◽  
Strong Function ◽  
Si Substrates ◽  
Metallic Impurities

ABSTRACTAn EBIC analysis is made of decorated heteroepitaxial misfit dislocations formed at the interface of Si-Si (Ge) epitaxial layers grown in a CVD reactor on Si substrates. The electrical activity of the dislocations is studied after decorating the dislocations with Ni and Au impurities introduced by ion-implantation and backside deposited metallic thin films. The impurities are activated by RTA annealing at 400, 800 and 1000°C. A model is presented for the formation of NiSi2 precipitates on misfit dislocations which suggests that the nucleation and growth of NiSi2 precipitates is a function of the cleanliness of the as-grown dislocations. It is concluded that the distribution of electrical activity of impurity decorated misfit dislocations is a strong function of the impurity type, condition of the as-grown material, and concentration of metallic impurities introduced during the process of decoration.

AEM analysis of crystallization in Ti-based amorphous alloys

1983 ◽  
Vol 41 ◽  
pp. 270-271
Author(s):  
A.R. Pelton ◽  
A.F. Marshall ◽  
Y.S. Lee
Keyword(s):  
Magnetic Properties ◽  
Amorphous Alloys ◽  
Amorphous Materials ◽  
Isothermal Annealing ◽  
Amorphous Matrix ◽  
Nucleation And Growth ◽  
Current Interest ◽  
Amorphous Films ◽  
Electrical And Magnetic Properties

Amorphous materials are of current interest due to their desirable mechanical, electrical and magnetic properties. Furthermore, crystallizing amorphous alloys provides an avenue for discerning sequential and competitive phases thus allowing access to otherwise inaccessible crystalline structures. Previous studies have shown the benefits of using AEM to determine crystal structures and compositions of partially crystallized alloys. The present paper will discuss the AEM characterization of crystallized Cu-Ti and Ni-Ti amorphous films.Cu60Ti40: The amorphous alloy Cu60Ti40, when continuously heated, forms a simple intermediate, macrocrystalline phase which then transforms to the ordered, equilibrium Cu3Ti2 phase. However, contrary to what one would expect from kinetic considerations, isothermal annealing below the isochronal crystallization temperature results in direct nucleation and growth of Cu3Ti2 from the amorphous matrix.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Observations oh Nucleation and Growth of Voids in Nickel

1970 ◽  
Vol 28 ◽  
pp. 414-415
Author(s):  
J. L. Brimhall ◽  
H. E. Kissinger ◽  
B. Mastel
Keyword(s):  
High Purity ◽  
Growth Stage ◽  
Elevated Temperatures ◽  
Early Growth ◽  
Nucleation And Growth ◽  
Pure Nickel ◽  
Different Temperatures ◽  
Total Fluence ◽  
Neutron Exposure ◽  
Growth Of Voids

Some information on the size and density of voids that develop in several high purity metals and alloys during irradiation with neutrons at elevated temperatures has been reported as a function of irradiation parameters. An area of particular interest is the nucleation and early growth stage of voids. It is the purpose of this paper to describe the microstructure in high purity nickel after irradiation to a very low but constant neutron exposure at three different temperatures.Annealed specimens of 99-997% pure nickel in the form of foils 75μ thick were irradiated in a capsule to a total fluence of 2.2 × 1019 n/cm2 (E > 1.0 MeV). The capsule consisted of three temperature zones maintained by heaters and monitored by thermocouples at 350, 400, and 450°C, respectively. The temperature was automatically dropped to 60°C while the reactor was down.

Electrochemical nucleation and growth of copper on iron and aluminum: A TEM study of industrial copper cementation

1978 ◽  
Vol 36 (1) ◽  
pp. 454-455
Author(s):  
L.E. Murr ◽  
V. Annamalai
Keyword(s):  
Metal Surface ◽  
Copper Deposit ◽  
Nucleation And Growth ◽  
16Th Century ◽  
Electrochemical Reactions ◽  
Mine Shaft ◽  
De Re ◽  
Copper Precipitation ◽  
Electrochemical Nucleation ◽  
Interesting System

Georgius Agricola in 1556 in his classical book, “De Re Metallica”, mentioned a strange water drawn from a mine shaft near Schmölnitz in Hungary that eroded iron and turned it into copper. This precipitation (or cementation) of copper on iron was employed as a commercial technique for producing copper at the Rio Tinto Mines in Spain in the 16th Century, and it continues today to account for as much as 15 percent of the copper produced by several U.S. copper companies.In addition to the Cu/Fe system, many other similar heterogeneous, electrochemical reactions can occur where ions from solution are reduced to metal on a more electropositive metal surface. In the case of copper precipitation from solution, aluminum is also an interesting system because of economic, environmental (ecological) and energy considerations. In studies of copper cementation on aluminum as an alternative to the historical Cu/Fe system, it was noticed that the two systems (Cu/Fe and Cu/Al) were kinetically very different, and that this difference was due in large part to differences in the structure of the residual, cement-copper deposit.

Fundamental Research into Thin Films in a Developing Country

1972 ◽  
Vol 30 ◽  
pp. 500-501
Author(s):  
J.A. Eades ◽  
E. Grünbaum
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Empirical Process ◽  
Nucleation And Growth ◽  
Research Groups ◽  
Film Research ◽  
Fundamental Research ◽  
Controlled Deposition ◽  
The One ◽  
The University

In the last decade and a half, thin film research, particularly research into problems associated with epitaxy, has developed from a simple empirical process of determining the conditions for epitaxy into a complex analytical and experimental study of the nucleation and growth process on the one hand and a technology of very great importance on the other. During this period the thin films group of the University of Chile has studied the epitaxy of metals on metal and insulating substrates. The development of the group, one of the first research groups in physics to be established in the country, has parallelled the increasing complexity of the field.The elaborate techniques and equipment now needed for research into thin films may be illustrated by considering the plant and facilities of this group as characteristic of a good system for the controlled deposition and study of thin films.

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