Ebic Analysis of Gettering at Si-Si (Ge) Heteroepitaxial Misfit Dislocations as a Function of Impurity Decoration

1992 ◽  
Vol 262 ◽  
Author(s):  
H. R. Kirk ◽  
Z. J. Radzimski ◽  
E. A. Fitzgerald ◽  
G. A. Rozgonyi
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Electrical Activity ◽  
Nucleation And Growth ◽  
Metallic Thin Films ◽  
Misfit Dislocations ◽  
Type Condition ◽  
Strong Function ◽  
Si Substrates ◽  
Metallic Impurities

ABSTRACTAn EBIC analysis is made of decorated heteroepitaxial misfit dislocations formed at the interface of Si-Si (Ge) epitaxial layers grown in a CVD reactor on Si substrates. The electrical activity of the dislocations is studied after decorating the dislocations with Ni and Au impurities introduced by ion-implantation and backside deposited metallic thin films. The impurities are activated by RTA annealing at 400, 800 and 1000°C. A model is presented for the formation of NiSi2 precipitates on misfit dislocations which suggests that the nucleation and growth of NiSi2 precipitates is a function of the cleanliness of the as-grown dislocations. It is concluded that the distribution of electrical activity of impurity decorated misfit dislocations is a strong function of the impurity type, condition of the as-grown material, and concentration of metallic impurities introduced during the process of decoration.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

The Gettering and Electrical Activity of Ni, Au, and Cu in Epitaxial Si/Si(2%Ge)/Si during RTA

1991 ◽  
Vol 224 ◽  
Author(s):  
Tian-Qun Zhou ◽  
Andrzej Buczkowski ◽  
Zbigniew Radzimski ◽  
George A. Rozgonyi
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electrical Activity ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Near Surface ◽  
Transmission Electron ◽  
Electron Beam Induced Current ◽  
Metallic Impurities ◽  
Scanning Electron

AbstractA study of gettering and electrical activity of metallic impurities Ni, Au and Cu has been carried out on epitaxial Si/Si(2%Ge)/Si wafers containing interfacial misfit dislocations. The impurities were intentionally introduced from a backside deposited thin metal followed by rapid thermal annealing (RTA). Transmission Electron Microscopy (TEM) results indicate that the impurities were gettered along the misfit dislocations in near-surface regions either as Au precipitate colonies, or as NiSi2 and CuSi silicide precipitates. Data from Scanning Electron Microscopy (SEM) in the Electron Beam Induced Current (EBIC) mode revealed that these precipitates dominate the recombination properties of the initially inactive misfit dislocation.

Fabrication of patterned domains with graphitic clusters in amorphous carbon using a combination of ion implantation and electron irradiation techniques

2005 ◽  
Vol 908 ◽  
Author(s):  
Eiji Iwamura ◽  
Tatsuhiko Aizawa
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Amorphous Carbon ◽  
Ion Beam ◽  
Film Surface ◽  
Carbon Films ◽  
Implantation Technique ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Beam Sputtering

AbstractFabrication of domains containing graphitic structures in amorphous carbon (a-C) films was demonstrated. Amorphous carbon thin films with 200 nm thickness were deposited on Si substrates by ion-beam sputtering. Iron atoms in a range from 4×1013 to 3.7×1016 cm-2 were doped to the a-C films by an ion implantation technique through a nickel mask with a grid of square windows of 500×500 μm and a net of 50 μm in width as a template. After removing the metal mask, the partly Fe-containing a-C films were exposed to a low-energy electron shower. In the regions where Fe atoms were implanted, Fe were crystallized and preferably diffused toward the film surface leaving graphitic structures more than 10 nm in size in the interior of the amorphous carbon films. On the other hand, the masked regions, where Fe atoms were not implanted, remained amorphous. The results suggest that regions, which consist of amorphous domains and graphitic domains, can be intentionally arranged in a-C thin films.

Effects Of Ar+ Ion Bombardment on the Nucleation and Growth of Ag Thin Films

1990 ◽  
Vol 202 ◽  
Author(s):  
C.M. Cotell ◽  
J.A. Sprague ◽  
C.R. Gossett
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Film Growth ◽  
Ion Beam ◽  
Nucleation And Growth ◽  
Nucleation Behavior ◽  
Si Substrates ◽  
Film Nucleation ◽  
Pvd Film

ABSTRACTThin films of Ag were grown on amorphous C and <111= Si substrates with simultaneous Ar+ bombardment at energies ranging from 50–40,000 eV. For deposition of Ag on amorphous C, ion beam bombardment induced no changes in film nucleation behavior relative to evaporation (henceforth referred to as physical vapor deposition, PVD). Film growth was affected at the highest energy (40 keV); the grain size of the Ag films was increased by a factor of three. Rutherford Backscattering (RBS) measurements on Ag films on <111=Si bombarded with Ar+ at 1.5 keV showed that the Ag sputtering yield at film thicknesses <1.5 nm was less than for bulk Ag, in agreement with TRIM calculations. At 40 keV there was evidence for an additional effect of the ion beam due to recoil implantation or ion mixing. Electron diffraction from Ag fdms grown on <111= Si substrates with simultaneous Ar+ bombardment at either 1.5 keV or 40 keV showed evidence for only the expected phases: single crystal Si, polycrystalline Ag, and an amorphous phase that likely resulted from ion damage to the substrate.

Mechanical behavior of thin Cu films studied by a four-point bending technique

2001 ◽  
Vol 673 ◽  
Author(s):  
Volker Weihnacht ◽  
Winfried Brückner
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
High Vacuum ◽  
Misfit Dislocations ◽  
Plastic Strains ◽  
Yield Behavior ◽  
Cu Films ◽  
Si Substrates ◽  
Four Point Bending ◽  
Tension And Compression

ABSTRACTFour-point bending experiments in combination with thermal cycling of thin films on substrates were performed in a dedicated apparatus. Strains up to ±0.8% could be imposed into Cu films of 0.2, 0.5, and 1.0 μm thickness on Si substrates by bending the substrates at various temperatures in high vacuum. After relief of the bending, the residual stress was measured by the wafer-curvature method. At temperatures below 250°C, the yield behavior is asymmetric in tension and compression. The amount of plastic strain introduced by external bending increases with film thickness, but the absolute values of the introduced plastic strains are very low throughout. At higher temperatures, there is no clear thickness dependence and no asymmetry in tension and compression. The results are discussed in connection with the formation of misfit dislocations during plastic deformation of thin films.

The enhanced adhesion properties of metallic thin films on metal substrates by ion implantation

Vacuum ◽  
1989 ◽  
Vol 39 (2-4) ◽  
pp. 405-407
Author(s):  
Zuwu Lai ◽  
Renhe Liu ◽  
Jiming Wang ◽  
Baifu Xie
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Metallic Thin Films ◽  
Adhesion Properties ◽  
Metal Substrates

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Fundamental Research into Thin Films in a Developing Country

1972 ◽  
Vol 30 ◽  
pp. 500-501
Author(s):  
J.A. Eades ◽  
E. Grünbaum
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Empirical Process ◽  
Nucleation And Growth ◽  
Research Groups ◽  
Film Research ◽  
Fundamental Research ◽  
Controlled Deposition ◽  
The One ◽  
The University

In the last decade and a half, thin film research, particularly research into problems associated with epitaxy, has developed from a simple empirical process of determining the conditions for epitaxy into a complex analytical and experimental study of the nucleation and growth process on the one hand and a technology of very great importance on the other. During this period the thin films group of the University of Chile has studied the epitaxy of metals on metal and insulating substrates. The development of the group, one of the first research groups in physics to be established in the country, has parallelled the increasing complexity of the field.The elaborate techniques and equipment now needed for research into thin films may be illustrated by considering the plant and facilities of this group as characteristic of a good system for the controlled deposition and study of thin films.

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