Light-Patterned and Recognition-Directed Adsorption of Nanoparticles at a Silicon Wafer Substrate

Nano Letters ◽  
2004 ◽  
Vol 4 (4) ◽  
pp. 573-575 ◽  
Author(s):  
Declan Ryan ◽  
Lorraine Nagle ◽  
Donald Fitzmaurice
Keyword(s):  
Silicon Wafer ◽  
Wafer Substrate

Synthesis, Film Morphology and Performance of a Functional Polysiloxane Containing Polyether, Epoxy and Trifluoropropyl Side Groups

2011 ◽  
Vol 480-481 ◽  
pp. 624-628
Author(s):  
Wei Xu ◽  
Qiu Feng An ◽  
Wei Xu
Keyword(s):  
Silicon Wafer ◽  
Molecular Orientation ◽  
Substrate Surface ◽  
Proton Nuclear Magnetic Resonance ◽  
Film Morphology ◽  
Water Contact ◽  
Atomic Force ◽  
Wafer Substrate ◽  
Finishing Agent ◽  
And Performance

A novel polysiloxane (PSA-PFMS) fabric finishing agent, bearing pendant stearyl acrylate, polyether, epoxy and trifluoropropyl side groups, etc., was synthesized by hydrosilylation of polytrifluoropropylhydromethylsiloxane (PFHMS), stearyl acrylate (SA), allylpolyoxyethylene ether (PEO) and allylglyeidyl ether (AGE). The chemical structure of PSA-PFMS was characterized by infrared spectrum (IR) and proton nuclear magnetic resonance (1H NMR). Film morphology and molecular orientation of PSA-PFMS on silicon wafer substrate surface were observed by atomic force microscope (AFM). Results show that PSA-PFMS can form an inhomogeneous and hydrophobic polysiloxane film with rough, scraggly and microscopic phase separation structures. All of these suggest that the molecular orientation of PSA-PFMS is in such a manner that the stearyl acrylate groups, trifluoropropyl and silicon methyl groups project outward into air, while polyether and Si-O dipole bonds point to the silicon wafer substrate surface. Owing to this highly rough and microscopic phase-separated hydrophobic film and its tight link with fabric, the treated fabrics are altered from hydrophile to hydrophobe with water contact angle of 129.2° and possess favorable washing endurance with WCA of 106.7° after 20 times of standard soaping procedure.

scholarly journals Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
P. Raju Mantena ◽  
Tezeswi Tadepalli ◽  
Brahmananda Pramanik ◽  
Veera M. Boddu ◽  
Matthew W. Brenner ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
High Strain Rate ◽  
Strain Rate ◽  
Silicon Wafer ◽  
High Strain ◽  
Flexural Rigidity ◽  
Functionally Graded ◽  
Dynamic Mechanical ◽  
Wafer Substrate ◽  
Vertically Aligned

The dynamic mechanical behavior and high-strain rate response characteristics of a functionally graded material (FGM) system consisting of vertically aligned carbon nanotube ensembles grown on silicon wafer substrate (VACNT-Si) are presented. Flexural rigidity (storage modulus) and loss factor (damping) were measured with a dynamic mechanical analyzer in an oscillatory three-point bending mode. It was found that the functionally graded VACNT-Si exhibited significantly higher damping without sacrificing flexural rigidity. A Split-Hopkinson pressure bar (SHPB) was used for determining the system response under high-strain rate compressive loading. Combination of a soft and flexible VACNT forest layer over the hard silicon substrate presented novel challenges for SHPB testing. It was observed that VACNT-Si specimens showed a large increase in the specific energy absorption over a pure Si wafer.

Designing a Photoresponsive Molecularly Imprinted System on a Silicon Wafer Substrate Surface

Langmuir ◽  
2013 ◽  
Vol 29 (26) ◽  
pp. 8311-8319 ◽  
Author(s):  
Dongsheng Wang ◽  
Danyang Xie ◽  
Wenbin Shi ◽  
Shudong Sun ◽  
Changsheng Zhao
Keyword(s):  
Silicon Wafer ◽  
Substrate Surface ◽  
Molecularly Imprinted ◽  
Wafer Substrate
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