Determination of Thermal Transition Depth Profiles in Polymer Semiconductor Films with Ellipsometry

2013 ◽  
Vol 46 (18) ◽  
pp. 7325-7331 ◽  
Author(s):  
Christian Müller ◽  
L. Mattias Andersson ◽  
Ovidio Peña-Rodríguez ◽  
Miquel Garriga ◽  
Olle Inganäs ◽  
...  
Keyword(s):  
Thermal Transition ◽  
Semiconductor Films ◽  
Depth Profiles ◽  
Transition Depth ◽  
Polymer Semiconductor

scholarly journals Новый подход к анализу фазового состава углеродсодержащих материалов методом времяпролетной вторично-ионной масс-спектрометрии

2019 ◽  
Vol 45 (2) ◽  
pp. 50
Author(s):  
М.Н. Дроздов ◽  
Ю.Н. Дроздов ◽  
А.И. Охапкин ◽  
С.А. Краев ◽  
М.А. Лобаев
Keyword(s):  
Mass Spectra ◽  
Secondary Ion Mass Spectrometry ◽  
Simple Algorithm ◽  
Cluster Ions ◽  
Two Phase ◽  
Depth Profiles ◽  
Secondary Cluster ◽  
Phase Systems ◽  
Secondary Ion

AbstractNew possibilities offered by the method of secondary ion mass spectrometry (SIMS) for analysis of the phase composition of carbon-containing materials are considered. Differences are established between the mass spectra of three carbon phases: diamond, diamond-like carbon (DLC), and graphite. A simple algorithm for the quantitative determination of different phases in two-phase systems diamond–graphite and DLC–graphite is proposed that is based on the measurement of relative intensities of secondary cluster ions such as C_8/C_5 and CsC_8/CsC_4. It is shown that nonuniform depth profiles of various carbon phases are formed in diamond structures upon laser cutting and in DLC structures upon thermal annealing.

scholarly journals Age–depth correlation, grain growth and dislocation-density evolution, for three ice cores

2009 ◽  
Vol 55 (190) ◽  
pp. 345-352 ◽  
Author(s):  
L.W. Morland
Keyword(s):  
Dislocation Density ◽  
Evolution Equation ◽  
Grain Growth ◽  
Ice Cores ◽  
Density Evolution ◽  
Depth Profiles ◽  
Growth Profiles ◽  
The Given ◽  
Theoretical Analyses

AbstractTwo previous theoretical analyses of data from the GRIP, Vostok and Byrd ice cores, presenting age–depth correlations, grain growth and dislocation-density evolution, are re-examined. It is found that the age–depth correlations are inconsistent with the idealized flow with unchanging history adopted, but that good correlations can be obtained by relaxing those restrictions. A modified grain-growth relation is proposed, consistent with the distinct growth profiles of the Vostok and other two cores, which can be solved simultaneously with the given dislocation-density evolution equation. These are solved for all three cores with the given parameters, and the depth profiles of grain diameter and dislocation density at the present time are determined with the new age–depth correlation and with that shown empirically in the papers. The varying flow history influences the age–depth correlation, and hence the depth profiles, which is important both for the interpretation of core data, and for the determination of constitutive variables at each depth at the present time.

Optical constants and thickness determination of very thin amorphous semiconductor films

2002 ◽  
Vol 92 (6) ◽  
pp. 3093-3102 ◽  
Author(s):  
I. Chambouleyron ◽  
S. D. Ventura ◽  
E. G. Birgin ◽  
J. M. Martínez
Keyword(s):  
Optical Constants ◽  
Amorphous Semiconductor ◽  
Semiconductor Films ◽  
Thickness Determination

Application of ionic microanalysis to the determination of boron depth profiles in silicon and silica

1972 ◽  
Vol 12 (2) ◽  
pp. 85-94 ◽  
Author(s):  
B. Blanchard ◽  
N. Hilleret ◽  
J. B. Quoirin
Keyword(s):  
Depth Profiles
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